Structural and Electrical Response of Emerging Memories Exposed to Heavy Ion Radiation.

Hafnium oxide- and GeSbTe-based functional layers are promising candidates in material systems for emerging memory technologies. They are also discussed as contenders for radiation-harsh environment applications. Testing the resilience against ion radiation is of high importance to identify materials that are feasible for future applications of emerging memory technologies like oxide-based, ferroelectric, and phase-change random-access memory.

Gradient-based and wavelet-based compressed sensing approaches for highly undersampled tomographic datasets.

Electron tomography is widely employed for the 3D morphological characterization at the nanoscale. In recent years, there has been a growing interest in analytical electron tomography (AET) as it is capable of providing 3D information about the elemental composition, chemical bonding and optical/electronic properties of nanomaterials. AET requires advanced reconstruction algorithms as the datasets often consist of a very limited number of projections.

Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed.

Fifty years after its discovery, the ovonic threshold switching (OTS) phenomenon, a unique nonlinear conductivity behavior observed in some chalcogenide glasses, has been recently the source of a real technological breakthrough in the field of data storage memories. This breakthrough was achieved because of the successful 3D integration of so-called OTS selector devices with innovative phase-change memories, both based on chalcogenide materials. This paves the way for storage class memories as well as neuromorphic circuits.