Guanine-based spin valve with spin rectification effect for an artificial memory element.

Non-volatile electronic memory elements are very attractive for applications, not only for information storage but also in logic circuits, sensing devices and neuromorphic computing. Here, a ferroelectric film of guanine nucleobase is used in a resistive memory junction sandwiched between two different ferromagnetic films of Co and CoCr alloys. The magnetic films have an in-plane easy axis of magnetization and different coercive fields whereas the guanine film ensures a very long spin transport length, at 100 K.

Relationship between the Formation of Magnetic Clusters and Hexagonal Phase of Gold Matrix in AuFe Nanophase Thin Films.

AuFe nanophase thin films of different compositions and thicknesses were prepared by co-deposition magnetron sputtering. Complex morpho-structural and magnetic investigations of the films were performed by X-ray Diffraction, cross-section Transmission Electron Microscopy, Selected Area Electron Diffraction, Magneto Optical Kerr Effect, Superconducting Quantum Interference Device magnetometry and Conversion Electron Mössbauer Spectroscopy. It was proven that depending on the preparation conditions, different configurations of defect α-Fe magnetic clusters, i.