A new model for in situ nitrogen incorporation into 4H-SiC during epitaxy.

Nitrogen doping of 4H-SiC during vapor phase epitaxy is still lacking of a general model explaining the apparently contradictory trends obtained by different teams. In this paper, the evolutions of nitrogen incorporation (on both polar Si and C faces) as a function of the main growth parameters (C/Si ratio, temperature, pressure and growth rate) are reviewed and explained using a model based on surface exchanges between the gas phase and the uppermost 4H-SiC atomic layers. In this model, N incorporation is driven mainly by the transient formation of C vacancies, due to H etching, at the surface or near the surface.

Hybrid Group IV Nanophotonic Structures Incorporating Diamond Silicon-Vacancy Color Centers.

We demonstrate a new approach for engineering group IV semiconductor-based quantum photonic structures containing negatively charged silicon-vacancy (SiV(-)) color centers in diamond as quantum emitters. Hybrid diamond-SiC structures are realized by combining the growth of nano- and microdiamonds on silicon carbide (3C or 4H polytype) substrates, with the subsequent use of these diamond crystals as a hard mask for pattern transfer. SiV(-) color centers are incorporated in diamond during its synthesis from molecular diamond seeds (diamondoids), with no need for ion-implantation or annealing.

Evidence for Flat Bands near the Fermi Level in Epitaxial Rhombohedral Multilayer Graphene.

The stacking order of multilayer graphene has a profound influence on its electronic properties. In particular, it has been predicted that a rhombohedral stacking sequence displays a very flat conducting surface state: the longer the sequence, the flatter the band. In such a flat band, the role of electron-electron correlation is enhanced, possibly resulting in high Tc superconductivity, magnetic order, or charge density wave order.

AlN hollow-nanofilaments by electrospinning.

We present for the first time an original method to elaborate AlN nanofilaments (NFs) by using a preceramic-based electrospinning process. Initially, an Al-containing precursor (poly(ethylimino)alane) is mixed with an organic spinnable polymer to be electrospun and generate polymeric filaments with a homogeneous diameter. A ceramization step at 1000 °C under ammonia and a crystallization step at 1400 °C under nitrogen are performed to get the final product made of AlN NFs with a diameter ranging from 150 to 200 nm.

Photonic crystal cavities in cubic (3C) polytype silicon carbide films.

We present the design, fabrication, and characterization of high quality factor (Q ~10(3)) and small mode volume (V ~0.75 (λ/n)(3)) planar photonic crystal cavities from cubic (3C) thin films (thickness ~200 nm) of silicon carbide (SiC) grown epitaxially on a silicon substrate. We demonstrate cavity resonances across the telecommunications band, with wavelengths from 1.

Highly confined hybrid spoof surface plasmons in ultrathin metal-dielectric heterostructures.

Highly confined "spoof" surface plasmons (SSPs) are theoretically predicted to exist in a perforated metal film coated with a thin dielectric layer. Strong modes confinement results from the additional waveguiding by the layer. Spectral characteristics, field distribution, and lifetime of these SSPs are tunable by the holes' size and shape.

Measurements of the negative refractive index of sub-diffraction waves propagating in an indefinite permittivity medium.

An indefinite permittivity medium (IPM) has been fabricated and optically characterized in mid-infrared spectral range (10.7 µm-11.3 µm).

Critically coupled surface phonon-polariton excitation in silicon carbide.

We observe critical coupling to surface phonon-polaritons in silicon carbide by attenuated total reflection of mid-IR radiation. Reflectance measurements demonstrate critical coupling by a double scan of wavelength and incidence angle. Critical coupling occurs when prism coupling loss is equal to losses in silicon carbide and the substrate, resulting in maximal electric field enhancement.