Nucleation and growth of copper selective-area atomic layer deposition on palladium nanostructures.

The nucleation and growth of copper atomic layer deposition (ALD) on palladium have been investigated for applications in nanoscale devices. Palladium nanostructures were fabricated by electron beam lithography and range in size from 250 nm to 5 μm, prepared on oxidized silicon wafers. Copper ALD using Cu(thd)(s) and H(g) as reactants was carried out to selectively deposit copper on palladium seeded regions to the exclusion of surrounding oxide surfaces.