Terahertz-frequency plasmonic-crystal instability in field-effect transistors with asymmetric gate arrays.

We present a theory for plasmonic crystal instability in a semiconductor field-effect transistor with a dual grating gate array, designed with strong asymmetry in the elementary cell of this "crystal". We demonstrate that, under the action of a dc current bias, the Bloch plasma waves in the plasmonic crystal formed in this transistor develop the Dyakonov-Shur instability. By calculating the energy spectrum and instability increments/decrements-which govern the growth/decay of excitations within the plasmonic crystal-we analyze the dependence of the latter on the electron drift velocity and the extent of the structural asymmetry.

On-Chip Integration of a Plasmonic FET Source and a Nano-Patch Antenna for Efficient Terahertz Wave Radiation.

Graphene-based Field-Effect Transistors (FETs) integrated with microstrip patch antennas offer a promising approach for terahertz signal radiation. In this study, a dual-stage simulation methodology is employed to comprehensively investigate the device's performance. The initial stage, executed in MATLAB, delves into charge transport dynamics within a FET under asymmetric boundary conditions, employing hydrodynamic equations for electron transport in the graphene channel.

Giant inverse Faraday effect in a plasmonic crystal ring.

Circularly polarized electromagnetic wave impinging on a conducting ring with a two-dimensional electron channel generates a circulating DC plasmonic current resulting in an inverse Faraday effect in nanorings. We show that a large ring with periodically modulated width on a nanoscale, smaller or comparable with the plasmonic mean free path, supports plasmon energy bands. When circularly polarized radiation impinges on such a plasmonic ring, it produces resonant DC plasmonic current on a macro scale resulting in a giant inverse Faraday effect.

Asymmetrically Engineered Nanoscale Transistors for On-Demand Sourcing of Terahertz Plasmons.

Terahertz (THz) plasma oscillations represent a potential path to implement ultrafast electronic devices and circuits. Here, we present an approach to generate on-chip THz signals that relies on plasma-wave stabilization in nanoscale transistors with specific structural asymmetry. A hydrodynamic treatment shows how the transistor asymmetry supports plasma-wave amplification, giving rise to pronounced negative differential conductance (NDC).

Plasmonic Field-Effect Transistors (TeraFETs) for 6G Communications.

Ever increasing demands of data traffic makes the transition to 6G communications in the 300 GHz band inevitable. Short-channel field-effect transistors (FETs) have demonstrated excellent potential for detection and generation of terahertz (THz) and sub-THz radiation. Such transistors (often referred to as TeraFETs) include short-channel silicon complementary metal oxide (CMOS).