Effect of Plasmonic Ag Nanoparticles on Emission Properties of Planar GaN Nanowires.

The combination of plasmonic nanoparticles and semiconductor substrates changes the properties of hybrid structures that can be used for various applications in optoelectronics, photonics, and sensing. Structures formed by colloidal Ag nanoparticles (NPs) with a size of 60 nm and planar GaN nanowires (NWs) have been studied by optical spectroscopy. GaN NWs have been grown using selective-area metalorganic vapor phase epitaxy.

Retraction: Polyethylene glycol-doped BiZnVO as a high-efficiency solar-light-activated photocatalyst with substantial durability toward photodegradation of organic contaminations.

[This retracts the article DOI: 10.1039/C8RA06896H.].

Quantum analysis of luminescence of an exciton in a meso-cavity.

Interaction of cavity modes with an exciton in a meso-cavity (the structure supporting several cavity modes separated by an energy interval comparable to Rabi-splitting of an exciton and cavity modes) has been analyzed using a quantum-mechanical approach. Simultaneous interaction of an exciton and several cavity modes results in few novel effects such as ladder-like increase of the exciton population in the system, quantum beating and non-monotonic dependence of the ground polariton state in the system on the pumping.

Single-emissive-layer all-perovskite white light-emitting diodes employing segregated mixed halide perovskite crystals.

Metal halide perovskites have demonstrated impressive properties for achieving efficient monochromatic light-emitting diodes. However, the development of white perovskite light-emitting diodes (PeLEDs) remains a big challenge. Here, we demonstrate a single-emissive-layer all-perovskite white PeLED using a mixed halide perovskite film as the emissive layer.

Development of β-GaO layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor.

Gallium oxide is a promising semiconductor with great potential for efficient power electronics due to its ultra-wide band gap and high breakdown electric field. Optimization of halide vapor phase epitaxy growth of heteroepitaxial [Formula: see text]-GaO layers is demonstrated using a simulation model to predict the distribution of the ratio of gallium to oxygen precursors inside the reactor chamber. The best structural quality is obtained for layers grown at 825-850 °C and with a III/VI precursor ratio of 0.