Micro-transfer printing InP C-band SOAs on advanced silicon photonics platform for lossless MZI switch fabrics and high-speed integrated transmitters.

We present an approach for the heterogeneous integration of InP semiconductor optical amplifiers (SOAs) and lasers on an advanced silicon photonics (SiPh) platform by using micro-transfer-printing (µTP). After the introduction of the µTP concept, the focus of this paper shifts to the demonstration of two C-band III-V/Si photonic integrated circuits (PICs) that are important in data-communication networks: an optical switch and a high-speed optical transmitter. First, a C-band lossless and high-speed Si Mach-Zehnder interferometer (MZI) switch is demonstrated by co-integrating a set of InP SOAs with the Si MZI switch.

Piperidine CD4-mimetic compounds expose vulnerable Env epitopes sensitizing HIV-1-infected cells to ADCC.

The ability of HIV-1 accessory proteins Nef and Vpu to decrease CD4 levels contributes to the protection of infected cells from antibody-dependent cellular cytotoxicity (ADCC) by preventing the exposure of Env vulnerable epitopes. Small-molecule CD4 mimetics (CD4mc) based on the indane and piperidine scaffolds such as (+)-BNM-III-170 and ( )-MCG-IV-210 sensitize HIV-1 infected cells to ADCC by exposing CD4-induced (CD4i) epitopes recognized by non-neutralizing antibodies abundantly present in plasma from people living with HIV. Here, we characterize a new family of CD4mc, ( )-MCG-IV-210 derivatives, based on the piperidine scaffold which engage the gp120 within the Phe43 cavity by targeting the highly-conserved Asp Env residue.

Micro-transfer-printed narrow-linewidth III-V-on-Si double laser structure with a combined 110 nm tuning range.

In this work, we demonstrate for the first time a narrow-linewidth III-V-on-Si double laser structure with more than a 110 nm wavelength tuning range realized using micro-transfer printing (µTP) technology. Two types of pre-fabricated III-V semiconductor optical amplifiers (SOAs) with a photoluminescence (PL) peak around 1500 nm and 1550 nm are micro-transfer printed on two silicon laser cavities. The laser cavities are fabricated in imec's silicon photonics (SiPh) pilot line on 200 mm silicon-on-insulator (SOI) wafers with a 400 nm thick silicon device layer.

How to objectively assess and observe maladaptive pain behaviors in clinical rehabilitation: a systematic search and review.

Background: Cognitive-affective factors influence the perception of pain and disability. These factors can lead to pain behaviors (PB) that can persist and become maladaptive. These maladaptive PB will further increase the risk of chronicity or persistence of symptoms and disability.

Lattice QCD Matrix Elements for the B_{s}^{0}-B[over ¯]_{s}^{0} Width Difference beyond Leading Order.

Predicting the B_{s}^{0}-B[over ¯]_{s}^{0} width difference ΔΓ_{s} relies on the heavy quark expansion and on hadronic matrix elements of ΔB=2 operators. We present the first lattice QCD results for matrix elements of the dimension-7 operators R_{2,3} and linear combinations R[over ˜]_{2,3} using nonrelativistic QCD for the bottom quark and a highly improved staggered quark (HISQ) action for the strange quark. Computations use MILC Collaboration ensembles of gauge field configurations with 2+1+1 flavors of sea quarks with the HISQ discretization, including lattices with physically light up or down quark masses.