Publications by authors named "G Morthier"

Silicon photonics is a rapidly developing technology that promises to revolutionize the way we communicate, compute and sense the world. However, the lack of highly scalable, native complementary metal-oxide-semiconductor (CMOS)-integrated light sources is one of the main factors hampering its widespread adoption. Despite considerable progress in hybrid and heterogeneous integration of III-V light sources on silicon, monolithic integration by direct epitaxy of III-V materials remains the pinnacle of cost-effective on-chip light sources.

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We present an approach for the heterogeneous integration of InP semiconductor optical amplifiers (SOAs) and lasers on an advanced silicon photonics (SiPh) platform by using micro-transfer-printing (µTP). After the introduction of the µTP concept, the focus of this paper shifts to the demonstration of two C-band III-V/Si photonic integrated circuits (PICs) that are important in data-communication networks: an optical switch and a high-speed optical transmitter. First, a C-band lossless and high-speed Si Mach-Zehnder interferometer (MZI) switch is demonstrated by co-integrating a set of InP SOAs with the Si MZI switch.

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Article Synopsis
  • Efficient grating couplers (GCs), particularly apodized GCs (AGCs), offer improved vertical coupling to thin silicon-on-insulator (SOI) waveguides while minimizing back reflection encountered with uniform GCs (UGCs).* -
  • The study showcases that AGCs, created through inverse design and gradient-based optimization, have a 3 dB lower coupling loss and better alignment with Gaussian beam profiles compared to UGCs.* -
  • Fabricated using electron beam lithography, the AGCs achieved a coupling efficiency of -5.86 dB, highlighting their compatibility with CMOS technology and the potential for high-performance applications in the C-band on the SOI platform.*
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We present recent results on compact and power efficient C-band distributed feedback lasers through adhesive bonding of a III-V die onto a silicon-on-insulator circuit. A wall-plug efficiency up to 16% is achieved for bias currents below 40 mA. The laser cavity is 180 µm long and a single facet output power up to 11 mW is measured at 20 °C by incorporating a broadband reflector in the silicon waveguide at one side of the cavity.

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Polymers are promising materials for fabricating photonic integrated waveguide devices. Versatile functional devices can be manufactured using a simple process, with low cost and potential mass-manufacturing. This paper reviews the recent progress of polymer photonic integrated devices fabricated using the UV imprinting technique.

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