Publications by authors named "G Eisenstein"

Integrating light emitters based on III-V materials with silicon-based electronics is crucial for further increase in data transfer rates in communication systems since the indirect bandgap of silicon prevents its direct use as a light source. We investigate here InAs/InGaAlAs quantum dot (QD) structures grown directly on 5° off-cut Si substrate and emitting light at 1.5 μm, compatible with established telecom platform.

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Article Synopsis
  • Dual comb spectroscopy (DCS) is a fast and high-resolution technique for broadband spectroscopy that traditionally uses complicated setups with fiber or solid-state lasers.
  • Recent advancements aim to create a hybrid system that combines the benefits of semiconductor lasers' cost-effectiveness and tunability with the wider bandwidth of fiber lasers.
  • This research successfully developed a hybrid dual-comb spectrometer that achieves a long mutual coherence time and improved stability by using injection locking and stabilizing the fiber laser's spectrum to a high finesse cavity.
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Controlling optical fields on the subwavelength scale is at the core of nanophotonics. Laser-driven nanophotonic particle accelerators promise a compact alternative to conventional radiofrequency-based accelerators. Efficient electron acceleration in nanophotonic devices critically depends on achieving nanometer control of the internal optical nearfield.

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We present a comprehensive study of the temperature dependent electronic and optoelectronic properties of a tunnelling injection quantum dot laser. The optical power-voltage ( -) characteristics are shown to be correlated with the current-voltage (-) and capacitance-voltage (-) dependencies at low and elevated temperatures. Cryogenic temperature measurements reveal a clear signature of resonant tunnelling manifested in periodic responses of the - and - characteristics, which diminish above 60 K.

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Coherent control is a key experimental technique for quantum optics and quantum information processing. We demonstrate a new degree of freedom in coherent control of semiconductor quantum dot (QD) ensembles operating at room temperature using the tunneling injection (TI) processes in which charge carriers tunnel directly from a quantum well reservoir to QD confined states. The TI scheme was originally proposed and implemented to improve QD lasers and optical amplifiers, by providing a direct injection path of cold carriers thereby eliminating the hot carrier injection problem which enhances gain nonlinearity.

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