A multilayer structure with a high-quality (Bi,La)(Fe,Co)Omultiferroic thin film/[Co/Pd] perpendicular magnetic thin film dots was fabricated for demonstrating magnetization reversal of [Co/Pd] dots under an applied electric field. Although the magnetization direction of the multiferroic thin film was reversed under the electric field, the magnetic properties of the multiferroic thin films were generally low. If the multiferroic thin film in this structure can control the magnetization direction of the highly functional magnetic thin film under an electric field, high-performance magnetic devices with low power consumption are easily obtained.
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