Flexible Superconducting Wiring for Integration with Low-Temperature Detector and Readout Fabrication.

We present a method of creating high-density superconducting flexible wiring on flexible thin silicon substrates. The flexible wiring, called , is created by depositing superconducting wiring on a silicon-on-insulator (SOI) wafer, selectively etching away the thicker silicon section layer, and bending the thinner silicon layer. We show measurements of superconducting transition temperature and critical current for Mo, Nb, and Al on SOI flex.

Kinetic inductance current sensor for visible to near-infrared wavelength transition-edge sensor readout.

Single-photon detectors based on the superconducting transition-edge sensor are used in a number of visible to near-infrared applications, particularly for photon-number-resolving measurements in quantum information science. To be practical for large-scale spectroscopic imaging or photonic quantum computing applications, the size of visible to near-infrared transition-edge sensor arrays and their associated readouts must be increased from a few pixels to many thousands. In this manuscript, we introduce the kinetic inductance current sensor, a scalable readout technology that exploits the nonlinear kinetic inductance in a superconducting resonator to make sensitive current measurements.

Characterization of Transition Edge Sensors for Decay Energy Spectrometry.

By using a superconducting transition edge sensor (TES) to measure the thermal energy of individual decay events with high energy resolution, decay energy spectrometry provides a unique fingerprint to identify each radionuclide in a sample. The proposed measurement requires optimizing the thermal parameters of the detector for use with 5 MeV scale energy deposited by alpha decay of the sample radionuclides. The thermal performance of deep-etched silicon TES chips is examined with the use of an onboard resistive heater.

Iodine Rearrangements of Tetraallylsilane and Synthesis of Silicon-Stereogenic Organosilanes.

Tetraallylsilane can undergo either a mono or double rearrangement when treated with iodine (I). The extent of rearrangement depends on the equivalents of I used, where 1 equivalent gives high yields of mono-rearranged products and excess (e.g.