The role of defects in the persistent photoconductivity of BaSnOthin films.

Time-dependent photoconductivity (PC) and PC spectra have been studied in oxygen deficient BaSnOthin films grown on different substrates. X-ray spectroscopy measurements show that the films have epitaxially grown on MgO and SrTiOsubstrates. While on MgO the films are nearly unstrained, on SrTiOthe resulting film is compressive strained in the plane.

Modification of the photoconducting properties of ZnO thin films via low-temperature annealing and air exposure.

A simple thermal annealing at 150 °C followed by exposure to air ambient conditions in epitaxial ZnO thin films produces a photoconductivity enhancement and a reduction of the energy gap. The first effect is related to a release of carriers from bulk traps while the second is caused by a gradual adsorption of species on the film surface which increases the band bending, as x-ray photoemission spectroscopy (XPS) shows. An observed drift of the photoconductivity and the energy gap over the days is connected to this adsorption kinetics.

The s-d exchange model as the underlying mechanism of magnetoresistance in ZnO doped with alkali metals.

High field magnetoresistance has been studied in epitaxial n-type ZnO:Na and ZnO:Li thin films in a temperature range between 4 K and 150 K. The resulting negative magnetoresistance can be well fitted using a semiempirical model of Khosla and Fischer based on third order contributions to the s-d exchange Hamiltonian. The parameters obtained from this model were carefully analyzed.

Electrical detection of spin precession in freely suspended graphene spin valves on cross-linked poly(methyl methacrylate).

Spin injection and detection is achieved in freely suspended graphene using cobalt electrodes and a nonlocal spin-valve geometry. The devices are fabricated with a single electron-beam-resist poly(methyl methacrylate) process that minimizes both the fabrication steps and the number of (aggressive) chemicals used, greatly reducing contamination and increasing the yield of high-quality, mechanically stable devices. As-grown devices can present mobilities exceeding 10(4) cm(2) V(-1) s(-1) at room temperature and, because the contacts deposited on graphene are only exposed to acetone and isopropanol, the method is compatible with almost any contacting material.

Revealing the origin of the vertical hysteresis loop shifts in an exchange biased Co/YMnO3 bilayer.

We have investigated exchange bias effects in bilayers composed of the antiferromagnetic o-YMnO(3) and ferromagnetic Co thin film by means of SQUID magnetometry, magnetoresistance, anisotropic magnetoresistance and the planar Hall effect. The magnetization and magneto-transport properties show pronounced asymmetries in the field and magnetization axes of the field hysteresis loops. Both exchange bias parameters, the exchange bias field H(E)(T) as well as the magnetization shift M(E)(T), vanish around the Néel temperature T(N) =/~ 45 K.