This study demonstrates the low-temperature (<100 °C) process for growing a thin silica buffer layer and aluminum oxide by atomic layer deposition (ALD) in the same reaction chamber. Heterogeneous multilayer thin films are prepared by a dual-mode equipment based on atomic layer deposition and plasma-enhanced chemical vapor deposition (PECVD) techniques. The pulse discrete feeding method (DFM) was used to divide the precursor purging steps into smaller intervals and generate discrete feeds, which improved the saturated distribution of gas precursors, film density and deposition selectivity.
View Article and Find Full Text PDFOrganic light emitting diodes (OLEDs) have been well known for their potential usage in the lighting and display industry. The device efficiency and lifetime have improved considerably in the last three decades. However, for commercial applications, operational lifetime still lies as one of the looming challenges.
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