The performance of quantum dots (QDs) in optoelectronic devices suffers as a result of sub-bandgap states induced by the large fraction of atoms on the surface of QDs. Recent progress in passivating these surface states with thiol ligands and halide ions has led to competitive efficiencies. Here, we apply a hybrid ligand mixture to passivate PbSe QD sub-bandgap tail states via a low-temperature, solid-state ligand exchange.
View Article and Find Full Text PDFWe investigate charge dynamics in solar cells constructed using solution-processed layers of CuInS2 (CIS) nanocrystals (NCs) as the electron donor and CdS as the electron acceptor. By using time-resolved spectroscopic techniques, we are able to observe photoinduced absorptions that we attribute to the mobile hole carriers in the NC film. In combination with transient photocurrent and photovoltage measurements, we monitor charge dynamics on time scales from 300 fs to 1 ms.
View Article and Find Full Text PDFHybrid nanocrystal-polymer systems are promising candidates for photovoltaic applications, but the processes controlling charge generation are poorly understood. Here, we disentangle the energy- and charge-transfer processes occurring in a model system based on blends of cadmium selenide nanocrystals (CdSe-NC) with poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene] (MDMO-PPV) using a combination of time-resolved absorption and luminescence measurements. The use of different capping ligands (n-butylamine, oleic acid) as well as thermal annealing allows tuning of the polymer-nanocrystal interaction.
View Article and Find Full Text PDFRecent research has pushed the efficiency of colloidal quantum dot solar cells toward a level that spurs commercial interest. Quantum dot/metal oxide bilayers form the most efficient colloidal quantum dot solar cells, and most studies have advanced the understanding of the quantum dot component. We study the interfacial recombination process in depleted heterojunction colloidal quantum dot (QD) solar cells formed with ZnO as the oxide by varying (i) the carrier concentration of the ZnO layer and (ii) the density of intragap recombination sites in the QD layer.
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