Order and change in art: towards an active inference account of aesthetic experience.

How to account for the power that art holds over us? Why do artworks touch us deeply, consoling, transforming or invigorating us in the process? In this paper, we argue that an answer to this question might emerge from a fecund framework in cognitive science known as predictive processing (a.k.a.

Aesthetics and predictive processing: grounds and prospects of a fruitful encounter.

In the last few years, a remarkable convergence of interests and results has emerged between scholars interested in the arts and aesthetics from a variety of perspectives and cognitive scientists studying the mind and brain within the predictive processing (PP) framework. This convergence has so far proven fruitful for both sides: while PP is increasingly adopted as a framework for understanding aesthetic phenomena, the arts and aesthetics, examined under the lens of PP, are starting to be seen as important windows into our mental functioning. The result is a vast and fast-growing research programme that promises to deliver important insights into our aesthetic encounters as well as a wide range of psychological phenomena of general interest.

Stimulated Ionic Telegraph Noise in Filamentary Memristive Devices.

Random telegraph noise is a widely investigated phenomenon affecting the reliability of the reading operation of the class of memristive devices whose operation relies on formation and dissolution of conductive filaments. The trap and the release of electrons into and from defects surrounding the filament produce current fluctuations at low read voltages. In this work, telegraphic resistance variations are intentionally stimulated through pulse trains in HfO-based memristive devices.

Extended memory lifetime in spiking neural networks employing memristive synapses with nonlinear conductance dynamics.

Spiking neural networks (SNNs) employing memristive synapses are capable of life-long online learning. Because of their ability to process and classify large amounts of data in real-time using compact and low-power electronic systems, they promise a substantial technology breakthrough. However, the critical issue that memristor-based SNNs have to face is the fundamental limitation in their memory capacity due to finite resolution of the synaptic elements, which leads to the replacement of old memories with new ones and to a finite memory lifetime.

Evidence of soft bound behaviour in analogue memristive devices for neuromorphic computing.

The development of devices that can modulate their conductance under the application of electrical stimuli constitutes a fundamental step towards the realization of synaptic connectivity in neural networks. Optimization of synaptic functionality requires the understanding of the analogue conductance update under different programming conditions. Moreover, properties of physical devices such as bounded conductance values and state-dependent modulation should be considered as they affect storage capacity and performance of the network.

Role of Al doping in the filament disruption in HfO resistance switches.

Resistance switching devices, whose operation is driven by formation (SET) and dissolution (RESET) of conductive paths shorting and disconnecting the two metal electrodes, have recently received great attention and a deep general comprehension of their operation has been achieved. However, the link between switching characteristics and material properties is still quite weak. In particular, doping of the switching oxide layer has often been investigated only for looking at performance upgrade and rarely for a meticulous investigation of the switching mechanism.

Ozone-Based Sequential Infiltration Synthesis of AlO Nanostructures in Symmetric Block Copolymer.

Sequential infiltration synthesis (SIS) provides an original strategy to grow inorganic materials by infiltrating gaseous precursors in polymeric films. Combined with microphase-separated nanostructures resulting from block copolymer (BCP) self-assembly, SIS selectively binds the precursors to only one domain, mimicking the morphology of the original BCP template. This methodology represents a smart solution for the fabrication of inorganic nanostructures starting from self-assembled BCP thin films, in view of advanced lithographic application and of functional nanostructure synthesis.

Thermodynamic stability of high phosphorus concentration in silicon nanostructures.

Doping of Si nanocrystals (NCs) has been the subject of a strong experimental and theoretical debate for more than a decade. A major difficulty in the understanding of dopant incorporation at the nanoscale is related to the fact that theoretical calculations usually refer to thermodynamic equilibrium conditions, whereas, from the experimental point of view, impurity incorporation is commonly performed during NC formation. This latter circumstance makes impossible to experimentally decouple equilibrium properties from kinetic effects.

Fabrication of periodic arrays of metallic nanoparticles by block copolymer templates on HfO2 substrates.

Block copolymer-based templates can be exploited for the fabrication of ordered arrays of metal nanoparticles (NPs) with a diameter down to a few nanometers. In order to develop this technique on metal oxide substrates, we studied the self-assembly of polymeric templates directly on the HfO₂ surface. Using a random copolymer neutralization layer, we obtained an effective HfO₂ surface neutralization, while the effects of surface cleaning and annealing temperature were carefully examined.

Resistive switching in high-density nanodevices fabricated by block copolymer self-assembly.

Bipolar resistive switching memories based on metal oxides offer a great potential in terms of simple process integration, memory performance, and scalability. In view of ultrahigh density memory applications, a reduced device size is not the only requirement, as the distance between different devices is a key parameter. By exploiting a bottom-up fabrication approach based on block copolymer self-assembling, we obtained the parallel production of bilayer Pt/Ti top electrodes arranged in periodic arrays over the HfO2/TiN surface, building memory devices with a diameter of 28 nm and a density of 5 × 10(10) devices/cm(2).