Polarization-independent nonuniform grating couplers on silicon-on-insulator.

Grating couplers are proposed for polarization-independent coupling of light between a single-mode fiber and a 220-nm-thick channel waveguide on silicon-on-insulator. The grating couplers have nonuniform grating periods that are composed of the intersection or union of a set of two near-optimal TE- and TM-grating periods. The proposed grating couplers have a coupling efficiency greater than 20% and polarization dependent loss (PDL) lower than 0.

Efficient waveguide-integrated tunnel junction detectors at 1.6 mum.

Near-infrared detectors based on metal-insulator-metal tunnel junctions integrated with planarized silicon nanowire waveguides are presented, which we believe to be the first of their kind. The junction is coupled to the waveguide via a thin-film metal antenna feeding a plasmonic travelling wave structure that includes the tunnel junction. These devices are inherently broadband; the design presented here operates throughout the 1500-1700 nm region.

Ni-NiO-Ni tunnel junctions for terahertz and infrared detection.

We present complete experimental determinations of the tunnel barrier parameters (two barrier heights, junction area, dielectric constant, and extrinsic series resistance) as a function of temperature for submicrometer Ni-NiO-Ni thin-film tunnel junctions, showing that when the temperature-invariant parameters are forced to be consistent, good-quality fits are obtained between I-V curves and the Simmons equation for this very-low-barrier system (measured phi approximately 0.20 eV). A splitting of approximately 10 meV in the barrier heights due to the different processing histories of the upper and lower electrodes is clearly shown, with the upper interface having a lower barrier, consistent with the increased effect of the image potential at a sharper material interface.