Can One Series of Self-Organized Nanoripples Guide Another Series of Self-Organized Nanoripples during Ion Bombardment: From the Perspective of Power Spectral Density Entropy?

Ion bombardment (IB) is a promising nanofabrication tool for self-organized nanostructures. When ions bombard a nominally flat solid surface, self-organized nanoripples can be induced on the irradiated target surface, which are called intrinsic nanoripples of the target material. The degree of ordering of nanoripples is an outstanding issue to be overcome, similar to other self-organization methods.

Enhancing the quality of self-organized nanoripples by Ar-ion bombardment of a bilayer system.

Ion bombardment (IB) is a promising nanofabrication technique for producing nanoripples. A critical issue that restricts the application of IB is the limited quality of IB-induced nanoripples. Photoresist (PR) and antireflection coating (ARC) are of technological relevance for lithographic exposure processes.

Optical anisotropy of self-organized gold quasi-blazed nanostructures based on a broad ion beam.

To circumvent elaborate conventional lithographic methods for realizing metallic nanostructures, it is necessary to develop self-organized nanofabrication methods for suitable template structures and their optical characterization. We demonstrate the potential of ion bombardment with impurity co-deposition to fabricate terraced or quasi-blazed nanostructure templates. Self-organized terraced nanostructures on fused silica were fabricated using ion bombardment with iron impurity co-deposition and subsequent Au shadow deposition.

Solvent influence on the surface morphology of P3HT thin films revealed by photoemission electron microscopy.

Only rigorous understanding of the relationship between the nanoscale morphology of organic thin films and the performance of the devices built from them will ultimately lead to design rules that can guide a structured development on the field of organic electronics. Despite great effort, unraveling the nanoscale structure of the films is still a challenge in itself. Here we demonstrate that photoemission electron microscopy can provide valuable insights into the chain orientation, domains size and grain boundary characteristics of P3HT films spun cast from different solvents at room as well as at elevated temperatures.

Ion beam planarization of diamond turned surfaces with various roughness profiles.

The effectiveness of ion beam planarization (IBP) to reduce surface roughness of diamond turned NiP surfaces was investigated. The surfaces with various spatial wavelengths and depths of turning marks were spray-coated and planarized with broad ion beam. The ion beam planarization was performed at a special angle where the etching rate of photoresist is closely similar to NiP.

Ripple coarsening on ion beam-eroded surfaces.

The temporal evolution of ripple pattern on Ge, Si, Al 2 O 3, and SiO 2 by low-energy ion beam erosion with Xe (+) ions is studied. The experiments focus on the ripple dynamics in a fluence range from 1.1 × 10(17) cm(-2) to 1.

Silicide induced ion beam patterning of Si(001).

Low energy ion beam pattern formation on Si with simultaneous co-deposition of Ag, Pd, Pb, Ir, Fe or C impurities was investigated by in situ scanning tunneling microscopy as well as ex situ atomic force microscopy, scanning electron microscopy, transmission electron microscopy and Rutherford backscattering spectrometry. The impurities were supplied by sputter deposition. Additional insight into the mechanism of pattern formation was obtained by more controlled supply through e-beam evaporation.

Is keV ion-induced pattern formation on Si(001) caused by metal impurities?

We present ion beam erosion experiments performed in ultrahigh vacuum using a differentially pumped ion source and taking care that the ion beam hits the Si(001) sample only. Under these conditions no ion beam patterns form on Si for angles theta < or = 45 degrees with respect to the global surface normal using 2 keV Kr+ and fluences of approximately 2 x 10(22) ions m(-2). In fact, the ion beam induces a smoothening of preformed patterns.