Rare earth element-doped BiNaTiO-BaTiO (BNT-BT-RE) polycrystalline thin films were processed on a platinized substrate by chemical solution deposition. The microstructure, dielectric, and ferroelectric properties were investigated for all prepared films. It was found that the incorporation of rare earth elements into the BNT-BT matrix increases both the dielectric constant and the breakdown strength while maintaining low dielectric losses, leading to an enhancement of the energy storage density to = 12 and 16 J/cm under an effective field of = 2500 kV/cm, for Nd- and Dy-based films, respectively.
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