Publications by authors named "Francois Amet"

We perform a systematic study of Andreev conversion at the interface between a superconductor and graphene in the quantum Hall (QH) regime. We find that the probability of Andreev conversion from electrons to holes follows an unexpected but clear trend: the dependencies on temperature and magnetic field are nearly decoupled. We discuss these trends and the role of the superconducting vortices, whose normal cores could both absorb and dephase the individual electrons in a QH edge.

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Article Synopsis
  • Superconducting diodes are innovative circuit elements that allow electrical current to flow without resistance in one direction while being resistive in the opposite direction.
  • Recent advancements have shown new types of these devices, but many have low efficiency and rely on magnetic fields; however, this study presents a device achieving nearly 100% efficiency at zero magnetic field.
  • The device, called a Josephson triode, consists of three graphene Josephson junctions and demonstrates its effectiveness by rectifying small electrical signals, suggesting potential applications in modern quantum circuits.
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The vanishing band gap of graphene has long presented challenges for making high-quality quantum point contacts (QPCs)─the partially transparent p-n interfaces introduced by conventional split gates tend to short circuit the QPCs. This complication has hindered the fabrication of graphene quantum Hall Fabry-Pérot interferometers, until recent advances have allowed split-gate QPCs to operate utilizing the highly resistive ν = 0 state. Here, we present a simple recipe to fabricate QPCs by etching a narrow trench in the graphene sheet to separate the conducting channel from self-aligned graphene side gates.

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The dynamical properties of multiterminal Josephson junctions (MT-JJs) have attracted interest, driven by the promise of new insights into synthetic topological phases of matter and Floquet states. This effort has culminated in the discovery of Cooper multiplets in which the splitting of a Cooper pair is enabled via a series of Andreev reflections that entangle four (or more) electrons. Here, we show that multiplet resonances can also emerge as a consequence of the three-terminal circuit model.

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When a Josephson junction is exposed to microwave radiation, it undergoes the inverse AC Josephson effect─the phase of the junction locks to the drive frequency. As a result, the - curves of the junction acquire "Shapiro steps" of quantized voltage. If the junction has three or more superconducting contacts, coupling between different pairs of terminals must be taken into account and the state of the junction evolves in a phase space of higher dimensionality.

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The AC Josephson effect manifests itself in the form of "Shapiro steps" of quantized voltage in Josephson junctions subject to radiofrequency (RF) radiation. This effect presents an early example of a driven-dissipative quantum phenomenon and is presently utilized in primary voltage standards. Shapiro steps have also become one of the standard tools to probe junctions made in a variety of novel materials.

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We present a study of a graphene-based Josephson junction with dedicated side gates carved from the same sheet of graphene as the junction itself. These side gates are highly efficient and allow us to modulate carrier density along either edge of the junction in a wide range. In particular, in magnetic fields in the 1- to 2-T range, we are able to populate the next Landau level, resulting in Hall plateaus with conductance that differs from the bulk filling factor.

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We investigate the electronic properties of ballistic planar Josephson junctions with multiple superconducting terminals. Our devices consist of monolayer graphene encapsulated in boron nitride with molybdenum-rhenium contacts. Resistance measurements yield multiple resonant features, which are attributed to supercurrent flow among adjacent and nonadjacent Josephson junctions.

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Article Synopsis
  • The fractional quantum Hall effect demonstrates how electron interactions create new ground states in many-body systems, particularly focusing on the lowest Landau level through the composite fermion model.
  • Researchers have examined fractional quantum Hall states in the N=2 Landau level of bilayer graphene, revealing that these states maintain particle-hole symmetry, unlike findings in the N=0/N=1 levels.
  • The study suggests the existence of alternative ground states besides composite fermions, indicating complex interactions within these higher Landau levels.
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We report simultaneous transport and scanning microwave impedance microscopy to examine the correlation between transport quantization and filling of the bulk Landau levels in the quantum Hall regime in gated graphene devices. Surprisingly, a comparison of these measurements reveals that quantized transport typically occurs below the complete filling of bulk Landau levels, when the bulk is still conductive. This result points to a revised understanding of transport quantization when carriers are accumulated by gating.

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We present transport measurements on long, diffusive, graphene-based Josephson junctions. Several junctions are made on a single-domain crystal of CVD graphene and feature the same contact width of ∼9 μm but vary in length from 400 to 1000 nm. As the carrier density is tuned with the gate voltage, the critical current in these junctions ranges from a few nanoamperes up to more than 5 μA, while the Thouless energy, ETh, covers almost 2 orders of magnitude.

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Graphene monolayers are known to display domains of anisotropic friction with twofold symmetry and anisotropy exceeding 200%. This anisotropy has been thought to originate from periodic nanoscale ripples in the graphene sheet, which enhance puckering around a sliding asperity to a degree determined by the sliding direction. Here we demonstrate that these frictional domains derive not from structural features in the graphene but from self-assembly of environmental adsorbates into a highly regular superlattice of stripes with period 4-6 nm.

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Hexagonal boron nitride (h-BN) films have attracted considerable interest as substrates for graphene. ( Dean, C. R.

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