AlO Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices.

Metal-oxide-semiconductor (MOS) capacitors with AlO as a gate insulator are fabricated on cubic silicon carbide (3C-SiC). AlO is deposited both by thermal and plasma-enhanced Atomic Layer Deposition (ALD) on a thermally grown 5 nm SiO interlayer to improve the ALD nucleation and guarantee a better band offset with the SiC. The deposited AlO/SiO stacks show lower negative shifts of the flat band voltage V (in the range of about -3 V) compared with the conventional single SiO layer (in the range of -9 V).

A Low Temperature Growth of CuO Thin Films as Hole Transporting Material for Perovskite Solar Cells.

Copper oxide thin films have been successfully synthesized through a metal-organic chemical vapor deposition (MOCVD) approach starting from the copper bis(2,2,6,6-tetramethyl-3,5-heptanedionate), Cu(tmhd), complex. Operative conditions of fabrication strongly affect both the composition and morphologies of the copper oxide thin films. The deposition temperature has been accurately monitored in order to stabilize and to produce, selectively and reproducibly, the two phases of cuprite CuO and/or tenorite CuO.

Growth, Electronic and Electrical Characterization of Ge-Rich Ge-Sb-Te Alloy.

In this study, we deposit a Ge-rich Ge-Sb-Te alloy by physical vapor deposition (PVD) in the amorphous phase on silicon substrates. We study in-situ, by X-ray and ultraviolet photoemission spectroscopies (XPS and UPS), the electronic properties and carefully ascertain the alloy composition to be GST 29 20 28. Subsequently, Raman spectroscopy is employed to corroborate the results from the photoemission study.

Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS Obtained by MoO Sulfurization.

In this paper, we report a multiscale investigation of the compositional, morphological, structural, electrical, and optical emission properties of 2H-MoS obtained by sulfurization at 800 °C of very thin MoO films (with thickness ranging from ~2.8 nm to ~4.2 nm) on a SiO/Si substrate.

Radiation Hardness of 4H-SiC P-N Junction UV Photo-Detector.

4H-SiC based p-n junction UV photo-detectors were irradiated with 600 keV He in the fluence range of 5 × 10 ÷ 5 × 10 ion/cm in order to investigate their radiation hardness. The effects of irradiation on the electro-optical performance were monitored in dark condition and in the UV (200 ÷ 400 nm) range, as well as in the visible region confirming the typical visible blindness of unirradiated and irradiated SiC photo-sensors. A decrease of UV optical responsivity occurred after irradiation and two fluence regimes were identified.

Correlation between Defects and Electrical Performances of Ion-Irradiated 4H-SiC p-n Junctions.

In this study, 4H-SiC p-n junctions were irradiated with 700 keV He ions in the fluence range 1.0 × 10 to 1.0 × 10 ions/cm.

Ambipolar MoS Transistors by Nanoscale Tailoring of Schottky Barrier Using Oxygen Plasma Functionalization.

One of the main challenges to exploit molybdenum disulfide (MoS) potentialities for the next-generation complementary metal oxide semiconductor (CMOS) technology is the realization of p-type or ambipolar field-effect transistors (FETs). Hole transport in MoS FETs is typically hampered by the high Schottky barrier height (SBH) for holes at source/drain contacts, due to the Fermi level pinning close to the conduction band. In this work, we show that the SBH of multilayer MoS surface can be tailored at nanoscale using soft O plasma treatments.

Advances in the fabrication of graphene transistors on flexible substrates.

Graphene is an ideal candidate for next generation applications as a transparent electrode for electronics on plastic due to its flexibility and the conservation of electrical properties upon deformation. More importantly, its field-effect tunable carrier density, high mobility and saturation velocity make it an appealing choice as a channel material for field-effect transistors (FETs) for several potential applications. As an example, properly designed and scaled graphene FETs (Gr-FETs) can be used for flexible high frequency (RF) electronics or for high sensitivity chemical sensors.

Impact of contact resistance on the electrical properties of MoS transistors at practical operating temperatures.

Molybdenum disulphide (MoS) is currently regarded as a promising material for the next generation of electronic and optoelectronic devices. However, several issues need to be addressed to fully exploit its potential for field effect transistor (FET) applications. In this context, the contact resistance, , associated with the Schottky barrier between source/drain metals and MoS currently represents one of the main limiting factors for suitable device performance.

Interface Electrical Properties of AlO Thin Films on Graphene Obtained by Atomic Layer Deposition with an in Situ Seedlike Layer.

High-quality thin insulating films on graphene (Gr) are essential for field-effect transistors (FETs) and other electronics applications of this material. Atomic layer deposition (ALD) is the method of choice to deposit high-κ dielectrics with excellent thickness uniformity and conformal coverage. However, to start the growth on the sp Gr surface, a chemical prefunctionalization or the physical deposition of a seed layer are required, which can effect, to some extent, the electrical properties of Gr.

Nanoscale probing of the lateral homogeneity of donors concentration in nitridated SiO2/4H-SiC interfaces.

In this paper, nanoscale resolution scanning capacitance microscopy (SCM) and local capacitance-voltage measurements were used to probe the interfacial donor concentration in SiO2/4H-SiC systems annealed in N2O. Such nitrogen-based annealings are commonly employed to passivate SiO2/SiC interface traps, and result both in the incorporation of N-related donors in SiC and in the increase of the mobility in the inversion layer in 4H-SiC MOS-devices. From our SCM measurements, a spatially inhomogeneous donor distribution was observed in the SiO2/4H-SiC system subjected to N2O annealing.

Micro- and nanoscale electrical characterization of large-area graphene transferred to functional substrates.

Chemical vapour deposition (CVD) on catalytic metals is one of main approaches for high-quality graphene growth over large areas. However, a subsequent transfer step to an insulating substrate is required in order to use the graphene for electronic applications. This step can severely affect both the structural integrity and the electronic properties of the graphene membrane.

Perineal scar endometriosis ten years after Miles' procedure for rectal cancer: Case report and review of the literature.

Endometriosis within a perineal scar after a Miles' procedure has not been previously reported in literature. We report a case of a 35-year-old-female who was treated 10 years before at the same institution for a low rectal cancer that presents with two discrete subcutaneous bulges within her perineal wound. Since the patient was asymptomatic and the complete work up for recurrent disease showed no evidence of malignancy, first line therapy was conservative.

Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC.

This work reports a nanoscale electro-structural characterisation of Ti/Al ohmic contacts formed on p-type Al-implanted silicon carbide (4H-SiC). The morphological and the electrical properties of the Al-implanted layer, annealed at 1700°C with or without a protective capping layer, and of the ohmic contacts were studied using atomic force microscopy [AFM], transmission line model measurements and local current measurements performed with conductive AFM.The characteristics of the contacts were significantly affected by the roughness of the underlying SiC.

Circulating plasma DNA as diagnostic biomarker in non-small cell lung cancer.

Objectives: The presence of circulating DNA in plasma of patients with malignant neoplasm has been a known fact for over 30 years. Since then, the concentration of free circulating plasma DNA has been studied as well as the genetic alterations and epigenetic alterations of tumour DNA of patients that suffer from various types of tumours. The analysis of circulating plasma DNA may be a useful marker to get an early diagnosis on malignant neoplasms.

Rare complication after anterior resection of the rectum and colon reconstruction: severe constipation with obstructed defecation. Report of a case.

Objective: The aim of this manuscript is to verify the impact that some recanalization procedures for intestinal continuity could have in bowel function and quality of life.

Study Material: We describe a clinical case of a rectal cancer patient who underwent anterior resection of the rectum with colo-anal anastomosis, colo-plasty and diverting ileostomy.

Results: After the diverting ileostomy closure, suffered of severe bowel function problems.

The role of diagnostic VATS in penetrating thoracic injuries.

Background: Penetrating chest injuries account for 1-13% of thoracic trauma hospital admissions and most of these are managed with a conservative approach. Nevertheless, 18-30% of cases managed only with tube thoracostomy have residual clotted blood, considered the major risk factor for the development of fibrothorax and empyema. In addition, 4-23% of chest injury patients present persistent pneumothorax and 15-59% present an injury to the diaphragm, which is missed in 30% of cases.

A case of metastatic epithelioid angiosarcoma in the lamina propria of a sigmoid tubulovillous adenoma.

Epithelioid angiosarcoma is an extremely rare tumor. It is generally a secondary tumor and the preferred sites of such metastases are the heart, pericardium, lung, breast, liver, spleen, bone, and brain. In rare cases the lung has been described as the primary site.

Multiple pulmonary nodules: a decisional algorithm.

The present international system for staging lung cancer classifies multiple pulmonary nodules present in one pulmonary lobe or in distinct ipsilateral or controlateral pulmonary lobes as stage IIIB and IV, respectively. In our opinion this approach does not guarantee the patient the best choice of therapy. Moreover, some studies support the choice of surgery for patients with multiple pulmonary nodules without mediastinal lymph node involvement.