High enhancement of sensitivity and reproducibility in label-free SARS-CoV-2 detection with graphene field-effect transistor sensors through precise surface biofunctionalization control.

The COVID-19 pandemic has taught us valuable lessons, especially the urgent need for a widespread, rapid and sensitive diagnostic tool. To this, the integration of bidimensional nanomaterials, particularly graphene, into point-of-care biomedical devices is a groundbreaking strategy able to potentially revolutionize the diagnostic landscape. Despite advancements in the fabrication of these biosensors, the relationship between their surface biofunctionalization and sensing performance remains unclear.

Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications.

In this paper, AlGaN/GaN high-electron-mobility transistors (HEMTs) with ohmic etching patterns (OEPs) "fabricated to improve device radio frequency (RF) performance for Ka-band applications" are reported. The fabricated AlGaN/GaN HEMTs with OEP structures were used to reduce the source and drain resistances ( and ) for RF performance improvements. Within the proposed study using 1 μm hole, 3 μm hole, 1 μm line, and 3 μm line OEP HEMTs with 2 × 25 μm gate widths, the small signal performance, large signal performance, and minimum noise figure () with optimized values were measured for 1 μm line OEP HEMTs.

Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin Gate Structure for Ka Band Applications.

In this paper, AlGaN/GaN high electron mobility transistors (HEMTs) with etched-fin gate structures fabricated to improve device linearity for Ka-band application are reported. Within the proposed study of planar, one-etched-fin, four-etched-fin, and nine-etched-fin devices, which have 50-μm, 25-μm, 10-μm, and 5-μm partial gate widths, respectively, the four-etched-fin gate AlGaN/GaN HEMT devices have demonstrated optimized device linearity with respect to the extrinsic transconductance (Gm) value, the output third order intercept point (OIP3), and the third-order intermodulation output power (IMD3) level. The IMD3 is improved by 7 dB at 30 GHz for the 4 × 50 μm HEMT device.

Analysis of the Reformulated Source to Drain Tunneling Probability for Improving the Accuracy of a Multisubband Ensemble Monte Carlo Simulator.

As an attempt to improve the description of the tunneling current that arises in ultrascaled nanoelectronic devices when charge carriers succeed in traversing the potential barrier between source and drain, an alternative and more accurate non-local formulation of the tunneling probability was suggested. This improvement of the probability computation might result of particular interest in the context of Monte Carlo simulations where the utilization of the conventional Wentzel-Kramers-Brillouin (WKB) approximation tends to overestimate the number of particles experiencing this type of direct tunneling. However, in light of the reformulated expression for the tunneling probability, it becomes of paramount importance to assess the type of potentials for which it behaves adequately.

A Review of Sharp-Switching Band-Modulation Devices.

This paper reviews the recently-developed class of band-modulation devices, born from the recent progress in fully-depleted silicon-on-insulator (FD-SOI) and other ultrathin-body technologies, which have enabled the concept of gate-controlled electrostatic doping. In a lateral PIN diode, two additional gates can construct a reconfigurable PNPN structure with unrivalled sharp-switching capability. We describe the implementation, operation, and various applications of these band-modulation devices.

Hysteresis in As-Synthesized MoS Transistors: Origin and Sensing Perspectives.

Two-dimensional materials, including molybdenum disulfide (MoS2), present promising sensing and detecting capabilities thanks to their extreme sensitivity to changes in the environment. Their reduced thickness also facilitates the electrostatic control of the channel and opens the door to flexible electronic applications. However, these materials still exhibit integration difficulties with complementary-MOS standardized processes and methods.

Self-Consistent Enhanced S/D Tunneling Implementation in a 2D MS-EMC Nanodevice Simulator.

The implementation of a source to drain tunneling in ultrascaled devices using MS-EMC has traditionally led to overestimated current levels in the subthreshold regime. In order to correct this issue and enhance the capabilities of this type of simulator, we discuss in this paper two alternative and self-consistent solutions focusing on different parts of the simulation flow. The first solution reformulates the tunneling probability computation by modulating the WKB approximation in a suitable way.

Quantum Enhancement of a S/D Tunneling Model in a 2D MS-EMC Nanodevice Simulator: NEGF Comparison and Impact of Effective Mass Variation.

As complementary metal-oxide-semiconductor (CMOS) transistors approach the nanometer scale, it has become mandatory to incorporate suitable quantum formalism into electron transport simulators. In this work, we present the quantum enhancement of a 2D Multi-Subband Ensemble Monte Carlo (MS-EMC) simulator, which includes a novel module for the direct Source-to-Drain tunneling (S/D tunneling), and its verification in the simulation of Double-Gate Silicon-On-Insulator (DGSOI) transistors and FinFETs. Compared to ballistic Non-Equilibrium Green's Function (NEGF) simulations, our results show accurate I D vs.