Publications by authors named "Francis ChiChung Ling"

The solar-blind ultraviolet band presents a unique opportunity for low-background-noise detection due to limited atmospheric light transmission. Especially, with the ability to obtain size, shape and position information on the objects, the solar-blind image sensors are receiving increasing attention. However, because the inhibition of the crosstalk in crossbar arrays induces the complexity of the preparation process, rarely are applicable solar-blind UV imaging arrays reported.

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Article Synopsis
  • - 2D thin films are gaining popularity for next-gen electronic devices because of their unique properties and high performance, but making them in large sizes is still a challenge.
  • - Pulsed laser deposition (PLD) has emerged as a strong method for producing large-area 2D films thanks to its efficient and effective growth processes.
  • - The review covers advances in PLD techniques, discusses various 2D materials like graphene and MoS, and outlines challenges and future research opportunities in this field.
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Article Synopsis
  • The study highlights the emerging interest in optoelectronic memory systems due to their dual function of sensing and data storage, along with their ability to hold multiple data states.
  • Despite advancements, existing optoelectronic memories face issues like high programming voltages, excessive optical power requirements, and compatibility problems due to reliance on specific materials.
  • The authors introduce a novel photosensitive dielectric architecture that allows data writing and erasing with significantly reduced energy consumption, using only 4V and 160µW/cm, which opens up new possibilities for non-volatile optoelectronic memory applications.
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High dielectric constant materials are of particular current interests as indispensable components in transistors, capacitors, etc. In this context, there are emerging trends to exploit defect engineering in dielectric ceramics for enhancing the performance. However, demonstrations of similar high dielectric performance in integration-compatible crystalline films are rare.

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In the progress of nonlinear optics, multiphoton absorption (MPA) upconversion lasing enables many vital applications in bioimaging, three-dimensional optical data storage, and photodynamic therapy. Here, efficient four-photon absorption upconversion lasing from the ZnO/ZnMgO multiple quantum wells (MQWs) at room temperature is realized. Moreover, the MPA upconversion lasing and third-harmonic generation peak generated in the MQWs under the excitation of a femtosecond (fs) laser pulse were observed concurrently, and the essential differences between each other were studied comprehensively.

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Hetero-MoO/MoO@N-doped carbon nanobelt anodes (h-MoO/MoO@NC) with long lifespan and superior rate capability were proposed by a simple in situ reduction tactic, in which pristine MoO was transformed into heterogeneous MoO/MoO. The hetero-MoO/MoO architecture significantly improves the electronic conductivity and affords abundant oxygen deficiencies. Meanwhile, the synergistic effect of internal MoO/MoO heterostructure and outer N-doped carbon layer (NC) accomplishes a balance of sustainable potassium/sodium storage and ultra-durable structure stability.

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For potential applications in ferroelectric switching and piezoelectric nano-generator devices, the promising ferroelectric properties of two dimensional (2D) layered In2Se3 attracted much attention. In the present study, 2D In2Se3 flakes down to monolayers are grown by the chemical vapor deposition (CVD) technique on a mica substrate with their structural, optical and ferroelectric properties being studied. The effect of growth parameters (time of growth and Ar flow rate) on the shape and size of the deposited flakes was studied.

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Undoped and Ga-doped ZnO films were grown on c-sapphire using pulsed laser deposition (PLD) at the substrate temperature of 600 °C. Positron annihilation spectroscopy study (PAS) shows that the dominant V-related defect in the as-grown undoped ZnO grown with relative low oxygen pressure P(O) is a vacancy cluster (most likely a V-nV complex with n = 2, 3) rather than the isolated V which has a lower formation energy. Annealing these samples at 900 °C induces out-diffusion of Zn from the ZnO film into the sapphire creating the V at the film/sapphire interface, which favors the formation of vacancy cluster containing relatively more V.

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