Chemical and Morphological Modifications Induced by Argon Plasma Treatments on Fluorinated Polybenzoxazole Films.

Fluorinated photodefinable polymers are widely employed as re-distribution layers in wafer-level packaging to produce microelectronic devices because of their suitable low dielectric constant and moisture absorption, high mechanical toughness, thermal conductivity and stability, and chemical inertness. Typically, fluorinated photodefinable polybenzoxazoles (F-PBOs) are the most used in this field. In the present work, we investigated by atomic force microscopy, X-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy the morphological and chemical modifications induced by Ar plasma treatments on F-PBO films.

Systematic Characterization of Plasma-Etched Trenches on 4H-SiC Wafers.

Silicon carbide power semiconductors overcome some limitations of silicon chips, and therefore, SiC is an attractive candidate for next-generation power electronics. In addition, the number of possible vertical devices that can be obtained on a given surface using the trench technique is significantly larger than that attainable using a planar setup. Moreover, a SiC trench power metal oxide semiconductor field-effect transistor (power MOSFET) structure removes the junction field-effect transistor (JFET) region (that would decrease the current flow width) and improves the channel density, thus reducing the specific electrical resistance.