Insights on the variability of Cu filament formation in the SiOelectrolyte of quantized-conductance conductive bridge random access memory devices.

Conductive bridge random access memory devices such as Cu/SiO/W are promising candidates for applications in neuromorphic computing due to their fast, low-voltage switching, multiple-conductance states, scalability, low off-current, and full compatibility with advanced Si CMOS technologies. The conductance states, which can be quantized, originate from the formation of a Cu filament in the SiOelectrolyte due to cation-migration-based electrochemical processes. A major challenge related to the filamentary nature is the strong variability of the voltage required to switch the device to its conducting state.