Laser Engineering Nanocarbon Phases within Diamond for Science and Electronics.

Diamond, as the densest allotrope of carbon, displays a range of exemplary material properties that are attractive from a device perspective. Despite diamond displaying high carbon-carbon bond strength, ultrashort (femtosecond) pulse laser radiation can provide sufficient energy for highly localized internal breakdown of the diamond lattice. The less-dense carbon structures generated on lattice breakdown are subject to significant pressure from the surrounding diamond matrix, leading to highly unusual formation conditions.

Diamond for Electronics: Materials, Processing and Devices.

Progress in power electronic devices is currently accepted through the use of wide bandgap materials (WBG). Among them, diamond is the material with the most promising characteristics in terms of breakdown voltage, on-resistance, thermal conductance, or carrier mobility. However, it is also the one with the greatest difficulties in carrying out the device technology as a result of its very high mechanical hardness and smaller size of substrates.

Improved Field Electron Emission Properties of Phosphorus and Nitrogen Co-Doped Nanocrystalline Diamond Films.

Nanocrystalline diamond (NCD) field emitters have attracted significant interest for vacuum microelectronics applications. This work presents an approach to enhance the field electron emission (FEE) properties of NCD films by co-doping phosphorus (P) and nitrogen (N) using microwave plasma-enhanced chemical vapor deposition. While the methane (CH) and P concentrations are kept constant, the N concentration is varied from 0.

Crystalline Defects Induced during MPCVD Lateral Homoepitaxial Diamond Growth.

The development of new power devices taking full advantage of the potential of diamond has prompted the design of innovative 3D structures. This implies the overgrowth towards various crystallographic orientations. To understand the consequences of such growth geometries on the defects generation, a Transmission Electron Microscopy (TEM) study of overgrown, mesa-patterned, homoepitaxial, microwave-plasma-enhanced, chemical vapor deposition (MPCVD) diamond is presented.

Control of the Alumina Microstructure to Reduce Gate Leaks in Diamond MOSFETs.

In contrast to Si technology, amorphous alumina cannot act as a barrier for a carrier at diamond MOSFET gates due to their comparable bandgap. Indeed, gate leaks are generally observed in diamond/alumina gates. A control of the alumina crystallinity and its lattice matching to diamond is here demonstrated to avoid such leaks.

Boron-Doping Proximity Effects on Dislocation Generation during Non-Planar MPCVD Homoepitaxial Diamond Growth.

Epitaxial lateral growth will be required if complex diamond-based device architecture, such as, for example, Metal-oxide-semiconductor Field-effect transistors (MOSFETs) or epitaxial lateral overgrowth (ELO) substrates, need to be developed for high-power applications. To this end, undoped and doped non-planar homoepitaxial diamond were overgrown on (001)-oriented diamond-patterned substrates. Defects induced by both the heavy boron doping and three-dimensional (3D) growth were studied by transmission electron microscopy (TEM).

Microwave Permittivity of Trace sp Carbon Impurities in Sub-Micron Diamond Powders.

Microwave dielectric loss tangent measurements are demonstrated as a method for quantifying trace sp-hybridized carbon impurities in sub-micron diamond powders. Appropriate test samples are prepared by vacuum annealing at temperatures from 600 to 1200 °C to vary the sp/sp carbon ratio through partial surface graphitization. Microwave permittivity measurements are compared with those obtained using X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and electron energy loss spectroscopy (EELS).