Publications by authors named "Ferechteh H Teherani"
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View Article and Find Full Text PDFWe investigate the optical signature of the interface in a single MgZnO/ZnO heterojunction, which exhibits two orders of magnitude lower resistivity and 10 times higher electron mobility compared with the MgZnO/AlO film grown under the same conditions. These impressive transport properties are attributed to increased mobility of electrons at the MgZnO/ZnO heterojunction interface. Depth-resolved cathodoluminescence and photoluminescence studies reveal a 3.
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- NSAG technique produces high-quality InGaN nanopyramids on GaN-coated ZnO/c-sapphire with uniform, single crystalline structures.
- These nanopyramids feature 22% indium incorporation and a thickness of 100 nm, making them comparable to structures on GaN and AlN/Si templates.
- The selective etching capability of ZnO allows for transferring these nanostructures to alternative, potentially cheaper substrates, providing a new avenue for developing flexible and tunable light-emitting diodes.