Broadband Photodetector Based on Inorganic Perovskite CsPbBr /GeSn Heterojunction.

Photodetectors with broadband response spectrum have attracted great interest in many application areas such as imaging, gas sensing, and night vision. Here, a high performance broadband photodetector is demonstrated with inorganic perovskite CsPbBr /GeSn heterojunction, detection range can be covered from 450 to 2200 nm. The responsivity of heterojunction device can achieve as high as 129 mA W under illuminated light of 532 nm, which is 4.

Negative Magnetoresistance in the GeSn Strip.

Discovery of topological materials associated with an exotic phenomenon has attracted increasing attention in modern condensed matter physics. A typical example is the chiral anomaly proposed in the Dirac or Weyl semimetals. In addition to the well-known topological semimetals, such as TaAs and NaBi, recently, group IV GeSn alloys were also proposed to be Dirac semimetals in theory, demonstrating potential applications compatible with current Si-based technology.

Spontaneously Conversion from Film to High Crystalline Quality Stripe during Molecular Beam Epitaxy for High Sn Content GeSn.

Two series of GeSn samples were grown on Ge buffered Si substrate by molecular beam epitaxy (MBE) to investigate the influence of growth temperature and film thickness towards the evolution of surface morphology. A novel phenomena was observed that the GeSn film was segregated and relaxed by the formation of GeSn stripes on the film. Under specific growth condition, the stripes can cover nearly the whole surface.