Performance enhancement of deep-ultraviolet LEDs by using quaternary AlInGaN polarization-engineered multiple-symmetrical-stair quantum barriers without electron blocking layer.

In this paper, a structure design using quaternary AlInGaN as multiple-symmetrical-stair-shaped quantum barriers without an electron blocking layer is shown. The results show this design mitigates the droop effect to ∼0.1, and the internal quantum efficiency reaches about 93.