High-Performance Perovskite Solar Cells and Modules Fabricated by Slot-Die Coating with Nontoxic Solvents.

Energy shortage has become a global issue in the twenty-firt century, as energy consumption grows at an alarming rate as the fossil fuel supply exhausts. Perovskite solar cells (PSCs) are a promising photovoltaic technology that has grown quickly in recent years. Its power conversion efficiency (PCE) is comparable to that of traditional silicon-based solar cells, and scale-up costs can be substantially reduced due to its utilization of solution-processable fabrication.

The influence on surface characteristic and biocompatibility of nano-SnO-modified titanium implant material using atomic layer deposition technique.

Background/purpose: To investigate the surface characteristics of titanium (Ti) implant materials, which were coated with different thicknesses of nanoscale tin oxide (SnO) using the atomic layer deposition technique, and evaluated its biological performance on human embryonic palatal mesenchyme (HEPM) cells.

Methods: The thickness of the coating layer on Ti was 0 (Ti0), 20 nm (Ti20), 50 nm (Ti50), and 100 nm (Ti100), respectively. The surface morphology was observed with an SEM and AFM.

Nano-Laminated Metal Oxides/Polyamide Stretchable Moisture- and Gas-Barrier Films by Integrated Atomic/Molecular Layer Deposition.

Stretchable barrier films capable of maintaining high levels of moisture- and gas-barrier performance under significant mechanical strains are a critical component for wearable/flexible electronics and other devices, but realization of stretchable moisture-barrier films has not been possible due to the inevitable issues of strain-induced rupturing compounded with moisture-induced swelling of a stretched barrier film. This study demonstrates nanolaminated polymer/metal oxide stretchable moisture-barrier films fabricated by a novel molecular layer deposition (MLD) process of polyamide-2,3 (PA-2,3) integrated with atomic layer deposition (ALD) metal oxide processes and an in situ surface-functionalization technique. The PA-2,3 surface upon in situ functionalization with HO vapor offers adequate surface chemisorption sites for rapid nucleation of ALD oxides, minimizing defects at the PA-2,3/oxide interfaces in the nanolaminates.

Validated Analysis of Component Distribution Inside Perovskite Solar Cells and Its Utility in Unveiling Factors of Device Performance and Degradation.

Time-of-flight secondary-ion mass spectrometry (ToF-SIMS) has been used for gaining insights into perovskite solar cells (PSCs). However, the importance of selecting ion beam parameters to eliminate artifacts in the resulting depth profile is often overlooked. In this work, significant artifacts were identified with commonly applied sputter sources, i.

Fabrication, Mechanisms, and Properties of High-Performance Flexible Transparent Conductive Gas-Barrier Films Based on Ag Nanowires and Atomic Layer Deposition.

Thin films of Ag nanowires (NWs) offer many advantages as transparent electrodes for flexible electronics, but their applications are hindered by issues including poor stability/durability of Ag NWs, high processing temperatures, heterogeneity of surfaces, and lack of gas-barrier function. This study reports novel mechanisms through which a conductive Hf:ZnO (HZO) film by atomic layer deposition (ALD) can be integrated with a sprayed Ag NWs film to address the issues of Ag NWs. First, the ALD surface reactions can induce fusing of the Ag NWs into a connected network without the need for a thermal sintering process.

Low-temperature gas-barrier films by atomic layer deposition for encapsulating organic light-emitting diodes.

Dependences of gas-barrier performance on the deposition temperature of atomic-layer-deposited (ALD) AlO, HfO, and ZnO films were studied to establish low-temperature ALD processes for encapsulating organic light-emitting diodes (OLEDs). By identifying and controlling the key factors, i.e.

Stable and High-Performance Flexible ZnO Thin-Film Transistors by Atomic Layer Deposition.

Passivation is a challenging issue for the oxide thin-film transistor (TFT) technologies because it requires prolonged high-temperature annealing treatments to remedy defects produced in the process, which greatly limits its manufacturability as well as its compatibility with temperature-sensitive materials such as flexible plastic substrates. This study investigates the defect-formation mechanisms incurred by atomic layer deposition (ALD) passivation processes on ZnO TFTs, based on which we demonstrate for the first time degradation-free passivation of ZnO TFTs by a TiO2/Al2O3 nanolaminated (TAO) film deposited by a low-temperature (110 °C) ALD process. By combining the TAO passivation film with ALD dielectric and channel layers into an integrated low-temperature ALD process, we successfully fabricate flexible ZnO TFTs on plastics.

Atomic layer deposition of NiO hole-transporting layers for polymer solar cells.

NiO is an attractive hole-transporting material for polymer solar cells (PSCs) owing to its excellent stability and electrical/optical properties. This study demonstrates, for the first time, fabrication of uniform, defect-free, and conformal NiO ultra-thin films for use as hole-transporting layers (HTLs) in PSCs by atomic layer deposition (ALD) through optimization of the ALD processing parameters. The morphological, optical, and electrical properties of ALD NiO films were determined to be favorable for their HTL application.

Air-stable flexible organic light-emitting diodes enabled by atomic layer deposition.

Organic light-emitting diodes (OLED) are an energy-efficient light source with many desirable attributes, besides being an important display of technology, but its practical application has been limited by its low air-stability. This study demonstrates air-stable flexible OLEDs by utilizing two atomic-layer-deposited (ALD) films: (1) a ZnO film as both a stable electron-injection layer (EIL) and as a gas barrier in plastics-based OLED devices, and (2) an Al2O3/ZnO (AZO) nano-laminated film for encapsulating the devices. Through analyses of the morphology and electrical/gas-permeation properties of the films, we determined that a low ALD temperature of 70 °C resulted in optimal EIL performance from the ZnO film and excellent gas-barrier properties [water vapor transmission rate (WVTR) <5 × 10(-4) g m(-2) day(-1)] from both the ZnO EIL and the AZO encapsulating film.

Transparent conductive gas-permeation barriers on plastics by atomic layer deposition.

A mixed-deposition atomic layer deposition process produces Hf:ZnO films with uniform dopant distribution and high electrical conductivity (resistivity = 4.5 × 10(-4) W cm), optical transparency (>85% from 400-1800 nm), and moisture-barrier property (water vapor transmission rate = 6.3 × 10(-6) g m(-2) day(-1)).

Interfacial energy levels and related properties of atomic-layer-deposited Al2O3 films on nanoporous TiO2 electrodes of dye-sensitized solar cells.

Low-temperature (approximately 150 degrees C), atomic-layer-deposited Al(2)O(3) films on nanoporous TiO2 electrodes of dye-sensitized solar cells (DSSCs) were investigated using electron spectroscopy. The power conversion efficiency (PCE) of the DSSCs was increased from 5.7% to 6.