The Enhanced Performance of Oxide Thin-Film Transistors Fabricated by a Two-Step Deposition Pressure Process.

It is usually difficult to realize high mobility together with a low threshold voltage and good stability for amorphous oxide thin-film transistors (TFTs). In addition, a low fabrication temperature is preferred in terms of enhancing compatibility with the back end of line of the device. In this study, α-IGZO TFTs were prepared by high-power impulse magnetron sputtering (HiPIMS) at room temperature.

Effects of an ice roller on chronic kidney disease-associated pruritus in patients receiving haemodialysis.

Background: Chronic kidney disease-associated pruritus is a distressing symptom and has a far-reaching impact on patients' sleep and quality of life for most patients receiving haemodialysis. Traditional therapies have limited effectiveness.

Objectives: This study aimed to invent a self-operated ice roller and evaluate its efficacy in relieving pruritus, sleep quality, and quality of life.

Internal moisture barrier layer for improving high-humidity reliability of miniature light emitting diode die without encapsulation.

Atomic layer deposited AlO films are incorporated into miniature light emitting diodes (mini-LEDs) as an internal moisture barrier layer. The experimental results show that the water vapor transmission rate reaches ≤10g/m/day when the AlO thickness is ≥40 nm. The mini-LED with a 40 nm-thick AlO layer shows negligible degradation after 1000 h of 85°C/85% relative humidity testing, whereas the device without an AlO layer fails after only 500 h due to delamination occurring at the GaN surface.

Recording Characteristics, Microstructure, and Crystallization Kinetics of Ge/GeCu Recording Film Used for Write-Once Blu-Ray Disc.

A GeCu (16 nm) layer and a Ge (3 nm)/GeCu (16 nm) bilayer were grown by sputtering at room temperature and used as the recording films for write-once blue laser media. In comparison to the crystallization temperature of Ge in a GeCu film (380.7 °C-405.