Light, Copper, Action: Visible-Light Illumination Enhances Bactericidal Activity of Copper Particles.

Bacteria are an old concern to human health, as they are responsible for nosocomial infections, and the number of antibiotic-resistant microorganisms keeps growing. Copper is known for its intrinsic biocidal properties, and therefore, it is a promising material to combat infections when added to surfaces. However, its biocidal properties in the presence of light illumination have not been fully explored, especially regarding the use of microsized particles since nanoparticles have taken over all fields of research and subjugated microparticles despite them being abundant and less expensive.

Phototribology: Control of Friction by Light.

In dry sliding, the coefficient of friction depends on the material pair and contact conditions. If the material and operating conditions remain unchanged, the coefficient of friction is constant. Obviously, we can tune friction by surface treatments, but it is a nonreversible process.

Role of Rare Earth Elements and Entropy on the Anatase-To-Rutile Phase Transformation of TiO Thin Films Deposited by Ion Beam Sputtering.

The role played by oxygen vacancies and rare earth (RE) elements in the anatase-to-rutile (A-R) phase transformation of titanium dioxide (TiO) is still a matter of controversy. Here, we report the A-R transformation of TiO thin solid films as obtained by ion beam sputtering a RE-decorated titanium target in an oxygen-rich atmosphere. The samples correspond to undoped, single-doped (Sm, Tm, and Tb), and codoped (Sm:Tb, Sm:Tm, and Sm:Tb:Tm) TiO films.

Epitaxial growth of Cu(001) thin films onto Si(001) using a single-step HiPIMS process.

We report on a new route to grow epitaxial copper (Cu) ultra-thin films (up to 150 nm thick) at ambient temperature on Si(001) wafers covered with native oxide without any prior chemical etching or plasma cleaning of the substrate. It consists of a single-step deposition process using high power impulse magnetron sputtering (HiPIMS) and substrate biasing. For a direct current (DC) substrate bias voltage of -130 V, Cu/Si heteroepitaxial growth is achieved by HiPIMS following the Cu(001) [100]//Si(001) [110] orientation, while under the same average deposition conditions, but using conventional DC magnetron sputtering, polycrystalline Cu films with [111] preferred orientation are deposited.