Silicon (Si) nano-electronics is advancing towards the end of the Moore's Law, as gate lengths of just a few nanometers have been already reported in state-of-the-art transistors. In the nanostructures that act as channels in transistors or depletion layers in diodes, the role of dopants becomes critical, since the transport properties depend on a small number of dopants and/or on their random distribution. Here, we present the possibility of single-charge tunneling in codoped Si nanodevices formed in silicon-on-insulator films, in which both phosphorus (P) donors and boron (B) acceptors are introduced intentionally.
View Article and Find Full Text PDFHighly transparent thin films with the chemical formula BaSrMgWO were deposited by spin coating using a solution of nitrates of Ba, Sr, and Mg and ammonium paratungstate in dimethylformamide with a Ba:Sr:Mg:W ratio = 1:1:1:1. XRD, SEM, EDX, and XPS investigations evidenced that annealing at 800 °C for 1 h results in an amorphous structure having a precipitate on its surface, and that supplementary annealing at 850 °C for 45 min forms a nanocrystalline structure and dissolves a portion of the precipitates. A textured double perovskite cubic structure (61.
View Article and Find Full Text PDFIn this work, optical, including photoluminescence and photosensitivity, characteristics of micrometer-sized flexible ()-InSe/InO heterojunctions, obtained by heat treatment of single-crystalline InSe plates doped with (0.5 at.%) Cd (Sn), in a water-vapor- and oxygen-enriched atmosphere, are investigated.
View Article and Find Full Text PDFThe oxidative stress induced by light exposed gold nanoparticles in some microorganism cells was investigated. Gold nanoparticles are currently used in biomedical and pharmaceutical research. For this study citrate-gold nanoparticles were synthesized in alkaline conditions at constant temperature of 85°C under magnetic stirring.
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