A new Gd-containing borate BaGd(BO)F has been successfully grown via the high-temperature solution method using BaF-NaF-BO flux. BaGd(BO)F crystallizing in the orthorhombic space group is with lattice parameters = 7.571(4) Å, = 10.
View Article and Find Full Text PDFA single crystal of SrGd(BO) has been successfully grown through a high-temperature solution technique with KO-KF-BO as the flux. It crystallizes in the space group with parameters = 22.3153(5) Å, = 15.
View Article and Find Full Text PDFUltraviolet (UV) beam generation at 266 nm using the sum-frequency (SFG) method with CsBO (CBO) crystals was first suggested in 1997 [Opt. Lett.22, 1840 (1997).
View Article and Find Full Text PDFA new praseodymium-based borate crystal PrCaBO (PCB) has been grown through the high temperature solution method. PCB crystallizes in monoclinic space group 2 with unit cell parameters of = 10.9475(10) Å, = 6.
View Article and Find Full Text PDFFor the explorations of deep ultraviolet (DUV) nonlinear optical (NLO) borates, a type of important optoelectronic material, the (BO ) group has been long regarded as the sole microscopic optically-active unit, and toxic Be-containing raw materials are frequently-adopted. Herein, a new DUV NLO crystal, Cs Al (B O ) O (CABO), was designed and synthesized by simultaneously replacing the (BO ) groups and Be cations for (B O ) units and Al cations in Sr Be (BO ) O, which possesses a favorable structure, through a chemical co-substitution approach. CABO exhibits a considerable DUV NLO capability because of the wide band gap and large birefringence originating from the [Al (B O ) O] double layers.
View Article and Find Full Text PDFThe optical parametric-chirped pulse amplification (OPCPA) based on large-aperture nonlinear optical crystals is promising for implementation of an ultrahigh peak-power laser system of 10 PW and beyond. We demonstrated the highest energy broadband OPCPA at 800 nm, to the best of our knowledge, by using an 80 mm in diameter LiB(3)O(5)(LBO) amplifier, with an output energy of 28.68 J, a bandwidth of 80 nm (FWHM), and conversion efficiency of 25.
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