A new digital soil mapping approach based on the adjacency effect.

Accurate soil mapping is crucial for agriculture, land, ecosystem and environmental management. Digital Soil Mapping (DSM) is one of the most conventional and widely used methods for mapping soil. This study introduces a novel strategy for DSM by incorporating the neighborhood effect of environmental covariates (ECs), aiming to enhance mapping accuracy of soil properties.

An Innovative Fusion-Based Scenario for Improving Land Crop Mapping Accuracy.

The accuracy of land crop maps obtained from satellite images depends on the type of feature selection algorithm and classifier. Each of these algorithms have different efficiency in different conditions; therefore, developing a suitable strategy for combining the capabilities of different algorithms in preparing a land crop map with higher accuracy can be very useful. The objective of this study was to develop a fusion-based framework for improving land crop mapping accuracy.

Surface biophysical features fusion in remote sensing for improving land crop/cover classification accuracy.

Preparing up-to-date land crop/cover maps is important to study in order to achieve food security. Therefore, the aim of this study was to evaluate the impact of surface biophysical features in the land crop/cover classification accuracy and introduce a new fusion-based method with more accurate results for land crop/cover classification. For this purpose, multi-temporal images from Sentinel 1 and 2, and an actual land crop map prepared by Agriculture and Agri-Food Canada (AAFC) in 2019 were used for 3 test sites in Ontario, Canada.

Comparison of spectral and spatial-based approaches for mapping the local variation of soil moisture in a semi-arid mountainous area.

Accurate information on soil moisture (SM) is critical in various applications including agriculture, climate, hydrology, soil and drought. In this paper, various predictive relationships including regression (Multiple Linear Regression, MLR), machine learning (Random Forest, RF; Triangular regression, Tr) and spatial modeling (Inverse Distance Weighing, IDW and Ordinary kriging, OK) approaches were compared to estimate SM in a semi-arid mountainous watershed. In developing predictive relationship, Remote Sensing datasets including Landsat 8 satellite imagery derived surface biophysical characteristic, ASTER digital elevation model (DEM) derived surface topographical characteristic, climatic data recorded at the synoptic station and in situ SM data measured at Landsat 8 overpass time were utilized, while in spatial modeling, point-based SM measurements were interpolated.

Improved digital soil mapping with multitemporal remotely sensed satellite data fusion: A case study in Iran.

Modeling and mapping of soil properties are critical in many environmental, climatic, ecological and hydrological applications. Digital soil mapping (DSM) techniques are now commonly applied to predict soil properties with limited data by developing predictive relationships with environmental covariates. Most studies derive covariates from a digital elevation model (named static covariates).

Widely-tunable, narrow-linewidth III-V/silicon hybrid external-cavity laser for coherent communication.

We demonstrate a III-V/silicon hybrid external cavity laser with a tuning range larger than 60 nm at the C-band on a silicon-on-insulator platform. A III-V semiconductor gain chip is hybridized into the silicon chip by edge-coupling the silicon chip through a SiN spot size converter. The demonstrated packaging method requires only passive alignment and is thus suitable for high-volume production.

Planar integrated metasurfaces for highly-collimated terahertz quantum cascade lasers.

We report planar integration of tapered terahertz (THz) frequency quantum cascade lasers (QCLs) with metasurface waveguides that are designed to be spoof surface plasmon (SSP) out-couplers by introducing periodically arranged SSP scatterers. The resulting surface-emitting THz beam profile is highly collimated with a divergence as narrow as ~4° × 10°, which indicates a good waveguiding property of the metasurface waveguide. In addition, the low background THz power implies a high coupling efficiency for the THz radiation from the laser cavity to the metasurface structure.

Electronic temperatures of terahertz quantum cascade active regions with phonon scattering assisted injection and extraction scheme.

We measured the lattice and subband electronic temperatures of terahertz quantum cascade devices based on the optical phonon-scattering assisted active region scheme. While the electronic temperature of the injector state (j = 4) significantly increases by ΔT = T(e)(4) - T(L) ~40 K, in analogy with the reported values in resonant phonon scheme (ΔT ~70-110 K), both the laser levels (j = 2,3) remain much colder with respect to the latter (by a factor of 3-5) and share the same electronic temperature of the ground level (j = 1). The electronic population ratio n(2)/n(1) shows that the optical phonon scattering efficiently depopulates the lower laser level (j = 2) up to an electronic temperature T(e) ~180 K.

Power-efficient III-V/silicon external cavity DBR lasers.

We report the design and characterization of external-cavity DBR lasers built with a III-V-semiconductor reflective-SOA with spot-size converter edge-coupled to SOI waveguides containing Bragg grating mirrors. The un-cooled lasers have wall-plug-efficiencies of up to 9.5% at powers of 6 mW.

Observation of phonon sideband emission in intrinsic InN nanowires: a photoluminescence and micro-Raman scattering study.

In this work, photoluminescence and micro-Raman scattering experiments were performed on undoped InN nanowires. It was found that, besides the main photoluminescence peak, a clear phonon sideband emission peak, with an extremely narrow linewidth ~9 meV, was measured. The phonon spectrum revealed by micro-Raman scattering indicates only uncoupled LO phonons are involved in such phonon sideband emission.

Tuning the surface charge properties of epitaxial InN nanowires.

We have investigated the correlated surface electronic and optical properties of [0001]-oriented epitaxial InN nanowires grown directly on silicon. By dramatically improving the epitaxial growth process, we have achieved, for the first time, intrinsic InN both within the bulk and at nonpolar InN surfaces. The near-surface Fermi-level was measured to be ∼0.

Terahertz quantum cascade lasers operating up to ∼ 200 K with optimized oscillator strength and improved injection tunneling.

A new temperature performance record of 199.5 K for terahertz quantum cascade lasers is achieved by optimizing the lasing transition oscillator strength of the resonant phonon based three-well design. The optimum oscillator strength of 0.

Molecular beam epitaxial growth and characterization of catalyst-free InN/InxGa1-xN core/shell nanowire heterostructures on Si(111) substrates.

We report on the achievement of, for the first time, InN/InGaN core/shell nanowire heterostructures, which are grown directly on Si(111) substrates by plasma-assisted molecular beam epitaxy. The crystalline quality of the heterostructures is confirmed by transmission electron microscopy, and the elemental mapping through energy dispersive x-ray spectrometry further reveals the presence of an InGaN shell covering the sidewall and top regions of the InN core. The optical characterizations reveal two emission peaks centered at ∼1685 nm and 1845 nm at 5 K, which are related to the emission from the InGaN shell and InN core, respectively.

Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays.

Vertically aligned InGaN/GaN nanorod light emitting diode (LED) arrays were created from planar LED structures using a new top-down fabrication technique consisting of a plasma etch followed by an anisotropic wet etch. The wet etch results in straight, smooth, well-faceted nanorods with controllable diameters and removes the plasma etch damage. 94% of the nanorod LEDs are dislocation-free and a reduced quantum confined Stark effect is observed due to reduced piezoelectric fields.

Large-scale cubic InN nanocrystals by a combined solution- and vapor-phase method under silica confinement.

Large-scale cubic InN nanocrystals were synthesized by a combined solution- and vapor-phase method under silica confinement. Nearly monodisperse cubic InN nanocrystals with uniform spherical shape were dispersed stably in various organic solvents after removal of the silica shells. The average size of InN nanocrystals is 5.

Full-color InGaN/GaN dot-in-a-wire light emitting diodes on silicon.

We report on the achievement of a new class of nanowire light emitting diodes (LEDs), incorporating InGaN/GaN dot-in-a-wire nanoscale heterostructures grown directly on Si(111) substrates. Strong emission across nearly the entire visible wavelength range can be realized by varying the dot composition. Moreover, we have demonstrated phosphor-free white LEDs by controlling the indium content in the dots in a single epitaxial growth step.

p-Type modulation doped InGaN/GaN dot-in-a-wire white-light-emitting diodes monolithically grown on Si(111).

Full-color, catalyst-free InGaN/GaN dot-in-a-wire light-emitting diodes (LEDs) were monolithically grown on Si(111) by molecular beam epitaxy, with the emission characteristics controlled by the dot properties in a single epitaxial growth step. With the use of p-type modulation doping in the dot-in-a-wire heterostructures, we have demonstrated the most efficient phosphor-free white LEDs ever reported, which exhibit an internal quantum efficiency of ∼56.8%, nearly unaltered CIE chromaticity coordinates with increasing injection current, and virtually zero efficiency droop at current densities up to ∼640 A/cm(2).

Electrically switching transverse modes in high power THz quantum cascade lasers.

The design and fabrication of a high power THz quantum cascade laser (QCL), with electrically controllable transverse mode is presented. The switching of the beam pattern results in dynamic beam switching using a symmetric side current injection scheme. The angular-resolved L-I curves measurements, near-field and far-field patterns and angular-resolved lasing spectra are presented.