High Performance Predictable Quantum Efficient Detector Based on Induced-Junction Photodiodes Passivated with SiO/SiN.

We performed a systematic study involving simulation and experimental techniques to develop induced-junction silicon photodetectors passivated with thermally grown SiO and plasma-enhanced chemical vapor deposited (PECVD) SiN thin films that show a record high quantum efficiency. We investigated PECVD SiN passivation and optimized the film deposition conditions to minimize the recombination losses at the silicon-dielectric interface as well as optical losses. Depositions with varied process parameters were carried out on test samples, followed by measurements of minority carrier lifetime, fixed charge density, and optical absorbance and reflectance.

LED-Based Photoacoustic NO Sensor with a Sub-ppb Detection Limit.

A high-sensitivity light-emitting diode (LED)-based photoacoustic NO sensor is demonstrated. Sensitive photoacoustic gas sensors based on incoherent light sources are typically limited by background noise and drifts due to a strong signal generated by light absorbed at the photoacoustic cell walls. Here, we reach a sub-ppb detection limit and excellent stability using cantilever-enhanced photoacoustic detection and perform a two-channel relative measurement.

Nonlinearity characterization of array spectroradiometers for the solar UV measurements.

Array spectroradiometers are attractive alternatives to scanning spectroradiometers in solar ultraviolet measurements. However, the measurement of solar spectral irradiance imposes stringent requirements for the linearity of the instruments. In this article, two array spectroradiometers were characterized for nonlinearity.

Comparison measurements of 0:45 radiance factor and goniometrically determined diffuse reflectance.

A comparison between the absolute gonioreflectometric scales at the Helsinki University of Technology (TKK) and the Physikalisch-Technische Bundesanstalt (PTB) has been accomplished. Six different reflection standards were measured for their 0:45 spectral radiance factor between 250 and 1650 nm in 10 nm intervals. Also, the 0:d reflectance factor between 400 and 1600 nm in 100 nm intervals was determined from goniometric reflectance measurements over polar angles with subsequent integration within the hemisphere above the sample.

Goniofluorometer for characterization of fluorescent materials.

A goniofluorometer has been built that is capable of measuring in various viewing angles ranging from 10 degrees to 90 degrees . The incident angle can be varied from 0 degrees to 8 degrees . The goniofluorometer can measure bispectral luminescent radiance factors in the wavelength range of 250-800 nm.

Characterization of thin films based on reflectance and transmittance measurements at oblique angles of incidence.

The optical parameters of a SiO2 thin-film coating determined from the spectral reflectance and transmittance measurements at various incidence angles, including the normal incidence and the Brewster's angle, are compared in this paper. The high-accuracy measurements were carried out through visible-near-infrared spectral regions by using our purpose-built instruments. The optical parameters obtained from the reflectance and the transmittance data are consistent over the angles of incidence and agree within 0.

Gonioreflectometer for measuring spectral diffuse reflectance.

Gonioreflectometric determination of reflectance factors that involves hemispherical collection of reflected flux, which is an alternative to integrating sphere-based methods, is discussed. A detailed description of a gonioreflectometer built at the Helsinki University of Technology is presented. The instrument is used to establish an absolute scale of total diffuse reflectance factors throughout the spectral range 360-830 nm.