Plasmonic internal-photoemission-based Si photodetector design suitable for optical communication.

We propose a high-performance plasmonic photodetector based on the internal photoemission (IPE) process for the C-band communication wavelength. This photodetector takes advantage of an embedded nanohole array in Schottky metal. Owing to localized surface plasmon resonance, the absorption of the active metal layer increases, which results in the generation of more hot carriers and subsequently compensates for the low efficiency of IPE-based photodetectors.