Ferroelectric Perovskite/MoS Channel Heterojunctions for Wide-Window Nonvolatile Memory and Neuromorphic Computing.

Ferroelectric materials commonly serve as gate insulators in typical field-effect transistors, where their polarization reversal enables effective modulation of the conductivity state of the channel material, thereby realizing non-volatile memory. Currently, novel 2D ferroelectrics unlock new prospects in next-generation electronics and neuromorphic computation. However, the advancement of these materials is impeded by limited selectivity and narrow memory windows.

Van der Waals Heterojunction Based Self-Powered Biomimetic Dual-Mode Sensor for Precise Object Identification.

The design and fabrication of materials that can concurrently respond to light and gas within the dual-modal recognition domain present a significant challenge due to contradictory structural requirements. This innovative strategy introduces a type-I heterojunction, combining the properties of SbTe and WSe nanosheets, to overcome these obstacles. The heterojunction is prepared through a precise stacking approach to create a single-side barrier on the valence band and a near-zero offset on the conduction band.

Infrared Interlayer Excitons in Twist-Free MoTe/MoS Heterobilayers.

Excitonic devices based on interlayer excitons in van der Waals heterobilayers are a promising platform for advancing photoelectric interconnection telecommunications. However, the absence of exciton emission in the crucial telecom C-band has constrained their practical applications. Here, this limitation is addressed by reporting exciton emission at 0.

Building Block-Inspired Hybrid Perovskite Derivatives for Ferroelectric Channel Layers with Gate-Tunable Memory Behavior.

Ferroelectric photovoltaics driven by spontaneous polarization (P ) holds a promise for creating the next-generation optoelectronics, spintronics and non-volatile memories. However, photoactive ferroelectrics are quite scarce in single homogeneous phase, owing to the severe P fatigue caused by leakage current of photoexcited carriers. Here, through combining inorganic and organic components as building blocks, we constructed a series of ferroelectric semiconductors of 2D hybrid perovskites, (HA) (MA) Pb Br (n=1-5; HA=hexylamine and MA=methylamine).

Synthesis of Ultrathin Topological Insulator β-Ag Te and Ag Te/WSe -Based High-Performance Photodetector.

β-Ag Te has attracted considerable attention in the application of electronics and optoelectronics due to its narrow bandgap, high mobility, and topological insulator properties. However, it remains a significant challenge to synthesize 2D Ag Te because of the non-layered structure of Ag Te. Herein, the synthesis of large-size, ultrathin single crystal topological insulator 2D Ag Te via the van der Waals epitaxial method for the first time is reported.

Interfacial engineering of tungstic disulfide-carbide heterojunction for high-current-density hydrogen evolution.

Developing low-cost and high-efficiency electrocatalysts to electrolyze water is an effective method for large-scale hydrogen production. For large-scale commercial applications, it is crucial to call for more efficient electrocatalysts with high-current density (≥1000 mA cm). However, it is challenging to simultaneously promote the large-scale production and hydrogen evolution reaction (HER) activity of these hydrogen catalysts.