Diode-pumped Tm:YAP laser operating at 2.3 µm with enhanced performance through cascade lasing.

The laser diode (LD)-pumped Tm:YAP (a-cut, 3.5 at.%) laser generated a maximum ∼2.

A Study on the Surface Quality and Damage Properties of Single-Crystal Silicon Using Different Post-Treatment Processes.

Detecting subsurface defects in optical components has always been challenging. This study utilizes laser scattering and photothermal weak absorption techniques to detect surface and subsurface nano-damage precursors of single-crystal silicon components. Based on laser scattering and photothermal weak absorption techniques, we successfully establish the relationship between damage precursors and laser damage resistance.

Watt-level diode-pumped Tm:YVO laser at 2.3 µm.

In this Letter, a watt-level laser diode (LD)-pumped ∼2.3-µm (on the H→H quasi-four-level transition) laser is reported based on a 1.5 at.

Compact diode-pumped continuous wave and passively Q switched Tm:YAG laser at 2.33 µm.

Compact diode-pumped continuous wave (CW) and passively Q switched Tm:YAG lasers operating on the H → H transition are demonstrated. Using a 3.5-at.

Cascade lasing at ∼2 μm and ∼2.3 μm in a diode-pumped Tm:YVO laser.

We report on the cascade continuous-wave operation of a diode-pumped Tm:YVO laser on the F → H (at ∼2 μm) and H → H (at ∼2.3 μm) Tm transitions. Pumped with a fiber-coupled spatially multimode 794 nm AlGaAs laser diode, the 1.

Large-scale few-layered MoS as a saturable absorber for Q-switching operation at 2.3 µm.

In this Letter, the fabrication of large-scale (50.8 mm in diameter) few-layered MoS with physical vapor deposition on sapphire is described. Open-aperture Z-scan technology with a home-made excitation source at 2275 nm was applied to explore its nonlinear saturable absorption properties.