Temperature-dependent photon detection efficiency model for InGaAs/InP SPADs.

InGaAs/InP single-photon avalanche diodes (SPADs) are nowadays employed in many photon-counting applications in the near-infrared range. Photon detection efficiency (PDE) is one of the most important parameters of these detectors and here we present a model to precisely estimate it at different temperatures. Starting from optical and electrical TCAD simulations, we selected the most suitable models for the complex refractive indexes, ionization coefficients and minority carrier lifetime from the literature, and adjusted them so to include temperature and doping dependences.

0.16 µm⁻BCD Silicon Photomultipliers with Sharp Timing Response and Reduced Correlated Noise.

Silicon photomultipliers (SiPMs) have improved significantly over the last years and now are widely employed in many different applications. However, the custom fabrication technologies exploited for commercial SiPMs do not allow the integration of any additional electronics, e.g.