Two electrons interacting at a mesoscopic beam splitter.

The nonlinear response of a beam splitter to the coincident arrival of interacting particles enables numerous applications in quantum engineering and metrology. Yet, it poses considerable challenges to control interactions on the individual particle level. Here, we probe the coincidence correlations at a mesoscopic constriction between individual ballistic electrons in a system with unscreened Coulomb interactions and introduce concepts to quantify the associated parametric nonlinearity.

Roadmap on quantum nanotechnologies.

Quantum phenomena are typically observable at length and time scales smaller than those of our everyday experience, often involving individual particles or excitations. The past few decades have seen a revolution in the ability to structure matter at the nanoscale, and experiments at the single particle level have become commonplace. This has opened wide new avenues for exploring and harnessing quantum mechanical effects in condensed matter.

Trapping and Counting Ballistic Nonequilibrium Electrons.

We demonstrate the trapping of electrons propagating ballistically at far-above-equilibrium energies in GaAs/AlGaAs heterostructures in high magnetic field. We find low-loss transport along a gate-modified mesa edge in contrast to an effective decay of excess energy for the loop around a neighboring, mesa-confined node, enabling high-fidelity trapping. Measuring the full counting statistics via single-charge detection yields the trapping (and escape) probabilities of electrons scattered (and excited) within the node.

Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics.

This paper reports on the direct qualitative and quantitative performance comparisons of the field-effect transistors (FETs) based on vertical gallium nitride nanowires (GaN NWs) with different NW numbers (i.e., 1-100) and diameters (i.

Minimum Resistance Anisotropy of Epitaxial Graphene on SiC.

We report on electronic transport measurements in rotational square probe configuration in combination with scanning tunneling potentiometry of epitaxial graphene monolayers which were fabricated by polymer-assisted sublimation growth on SiC substrates. The absence of bilayer graphene on the ultralow step edges of below 0.75 nm scrutinized by atomic force microscopy and scanning tunneling microscopy result in a not yet observed resistance isotropy of graphene on 4H- and 6H-SiC(0001) substrates as low as 2%.