Amorphous nitride semiconductors with highly tunable optical and electronic properties: the benefits of disorder in Ca-Zn-N thin films.

Semiconducting ternary nitrides are a promising class of materials that have received increasing attention in recent years, but often show high free electron concentrations due to the low defect formation energies of nitrogen vacancies and substitutional oxygen, leading to degenerate n-type doping. To achieve non-degenerate behavior, we now investigate a family of amorphous calcium-zinc nitride (Ca-Zn-N) thin films. By adjusting the metal cation ratios, we demonstrate band gap tunability between 1.

Zirconium Oxynitride Thin Films for Photoelectrochemical Water Splitting.

Transition metal oxynitrides are a promising class of functional materials for photoelectrochemical (PEC) applications. Although these compounds are most commonly synthesized via ammonolysis of oxide precursors, such synthetic routes often lead to poorly controlled oxygen-to-nitrogen anion ratios, and the harsh nitridation conditions are incompatible with many substrates, including transparent conductive oxides. Here, we report direct reactive sputter deposition of a family of zirconium oxynitride thin films and the comprehensive characterization of their tunable structural, optical, and functional PEC properties.

Sputter Deposited Magnetostrictive Layers for SAW Magnetic Field Sensors.

For the best possible limit of detection of any thin film-based magnetic field sensor, the functional magnetic film properties are an essential parameter. For sensors based on magnetostrictive layers, the chemical composition, morphology and intrinsic stresses of the layer have to be controlled during film deposition to further control magnetic influences such as crystallographic effects, pinning effects and stress anisotropies. For the application in magnetic surface acoustic wave sensors, the magnetostrictive layers are deposited on rotated piezoelectric single crystal substrates.

Indirect bandgap, optoelectronic properties, and photoelectrochemical characteristics of high-purity TaN photoelectrodes.

The (opto)electronic properties of TaN photoelectrodes are often dominated by defects, such as oxygen impurities, nitrogen vacancies, and low-valent Ta cations, impeding fundamental studies of its electronic structure, chemical stability, and photocarrier transport. Here, we explore the role of ammonia annealing following direct reactive magnetron sputtering of tantalum nitride thin films, achieving near-ideal stoichiometry, with significantly reduced native defect and oxygen impurity concentrations. By analyzing structural, optical, and photoelectrochemical properties as a function of ammonia annealing temperature, we provide new insights into the basic semiconductor properties of TaN, as well as the role of defects on its optoelectronic characteristics.