Publications by authors named "F Motti"

Ferroionic materials combine ferroelectric properties and spontaneous polarization with ionic phenomena of fast charge recombination and electrodic functionalities. In this paper, we propose the concept of tunable polarization in CeO (ceria) thin (5 nm) films induced by built-in remnant polarization of a BaTiO (BTO) ferroelectric thin film interface, which is buried under the ceria layer. Upward and downward fixed polarizations at the BTO thin film (10 nm) are achieved by the lattice termination engineering of the SrO or TiO terminated Nb:SrTiO (NSTO or STN) substrate.

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Metallic ferromagnetic transition metal dichalcogenides have emerged as important building blocks for scalable magnetic and memory applications. Downscaling such systems to the ultrathin limit is critical to integrate them into technology. Here, we achieved layer-by-layer control over the transition metal dichalcogenide CrTe by using pulsed laser deposition, and we uncovered the minimum critical thickness above which room-temperature magnetic order is maintained.

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Utilizing the magnetostrictive properties of CoFeO, we demonstrate reversible room temperature control of the Ti electronic structure in SrTiO-CoFeO heterostructures, by inducing local and reversible strain in the SrTiO. By means of X-ray absorption spectroscopy, we have ascertained the changes that take place in the energy levels of the Ti 3d orbitals under the influence of an external magnetic field. The observed Ti electronic state when the sample is subjected to moderately large external magnetic fields and the disappearance of the induced phase upon their removal indicates lattice distortions that are suggestive of the development of a net electric polarization.

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Here, we present an integrated ultra-high vacuum apparatus-named MBE-Cluster -dedicated to the growth and in situ structural, spectroscopic, and magnetic characterization of complex materials. Molecular Beam Epitaxy (MBE) growth of metal oxides, e.g.

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Article Synopsis
  • Resistive switching oxides are key materials for mimicking synaptic behavior in artificial neural networks, particularly with interface-type switching systems that allow gradual, analog switching.
  • These devices typically combine a conductive oxide layer with an insulating tunnel barrier, but existing tunnel oxides tend to form unwanted conducting filaments when voltage thresholds are exceeded.
  • The study uses advanced techniques to analyze two tunnel oxide devices, revealing that oxygen ion exchange plays a crucial role in switching mechanisms, and even when filamentary switching occurs, ionic motion remains active across the device.
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