Polarization enhanced GaN separate absorption and multiplication ultraviolet avalanche photodiodeswith an ScGaN interlayer.

This article proposes a separate absorption and multiplication (SAM) GaN-based avalanche photodiode (APD) that achieves both high gain and low operating voltage by applying Sc-based ferroelectric material ScGaN in APDs. The avalanche gain of the proposed SAM APD with a low Sc composition p-ScGaN insertion layer reaches 7.2 × 10, which is 60% higher than that of a conventional p-i-p-i-n GaN-based APD.

Effect of Rapid Thermal Annealing on Si-Based Dielectric Films Grown by ICP-CVD.

Silicon nitride, silicon oxide, and silicon oxynitride thin films were deposited on the Si substrate by inductively coupled plasma chemical vapor deposition and annealed at 1100 °C for 3 min in an Ar environment. Silicon nitride and silicon oxide films deposited at ratios of the reactant flow rates of SiH/N = 1.875 and SiH/NO = 3, respectively, were Si-rich, while Si excess for the oxynitride film (SiH/N/NO = 3:2:2) was not found.

Nanostructured TiAlCuN and TiAlCuCN coatings for spacecraft: effects of reactive magnetron deposition regimes and compositions.

Spacecraft are exposed to a number of factors in the outer space: irradiation by electron flows, high-energy ions, solar electromagnetic radiation, plasma irradiation, and a stream of meteorite particles. All these factors initiate various physical and chemical processes in spacecraft materials, which can eventually lead to failure. To ensure reliable operation of spacecraft, it is necessary to use protective coatings and special radiation-resistant materials.

Influence of Annealing on the Dielectric Properties of Zn-SiO/Si Nanocomposites Obtained in "Hot" Implantation Conditions.

This paper presents the results of AC electrical measurements of Zn-SiO/Si nanocomposites obtained by ion implantation. Implantation of Zn ions was carried out into thermally oxidized p-type silicon substrates with energy of 150 keV and fluence of 7.5 × 10 ion·cm at a temperature of 773 K, and is thus called implantation in "hot" conditions.

Measurements of Microstructural, Chemical, Optical, and Electrical Properties of Silicon-Oxygen-Nitrogen Films Prepared by Plasma-Enhanced Atomic Layer Deposition.

In this study, silicon nitride (SiN) thin films with different oxygen concentration (i.e., SiON film) were precisely deposited by plasma enhanced atomic layer deposition on Si (100) substrates.