Publications by authors named "F Failamani"

The nickel-rich region of the system Ce-Ni-Si has been reinvestigated utilizing X-ray single-crystal, powder, and electron diffraction as well as electron microprobe and thermal analyses. Two novel hexagonal compounds, τ-CeNiSi and τ'-CeNiSi were identified. The crystal structure of τ-CeNiSi was derived from single-crystal X-ray diffraction and found to be isotypic with the SmNiP-type structure (S.

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The structural and thermoelectric properties of the filled skutterudite (Sm,Gd)(FeNi)Sb were investigated and critically compared to the ones in the Sm-containing system with the aim of unravelling the effect of double filling on filling fraction and thermal conductivity. Several samples ( = 0.50-0.

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The crystal structures of two novel borides in the Ni-Zn-B system, τ-NiZnB and τ-NiZnB, were determined by single crystal X-ray diffraction (XRSC) in combination with selected area electron diffraction in a transmission electron microscope (SAED-TEM) and electron probe microanalysis (EPMA). Both compounds crystallize in unique structure types (space group C2/m, a = 1.68942(8) nm, b = 0.

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Phase relations and crystal structures have been evaluated within the sections LaNi2Si2-LaZn2Si2 and CeNi2Si2-CeZn2Si2 at 800 °C using electron microprobe analysis and X-ray powder and single crystal structure analyses. Although the systems La-Zn-Si and Ce-Zn-Si at 800 °C do not reveal compounds such as "LaZn2Si2" or "CeZn2Si2", solid solutions {La,Ce}(Ni1-xZnx)2Si2 exist with the Ni/Zn substitution starting from {La,Ce}Ni2Si2 (ThCr2Si2-type; I4/mmm) up to x = 0.18 for Ce(Ni1-xZnx)2Si2 and x = 0.

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The novel compounds Ba5{V,Nb}12Sb19+x, initially found in diffusion zone experiments between Ba-filled skutterudite Ba0.3Co4Sb12 and group V transition metals (V,Nb,Ta), were synthesized via solid state reaction and were characterized by means of X-ray (single crystal and powder) diffraction, electron probe microanalysis (EPMA), and physical (transport and mechanical) properties measurements. Ba5V12Sb19.

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