Nature of the Metal Insulator Transition in High-Mobility 2D_Si-MOSFETs.

Our investigation focuses on the analysis of the conductive properties of high-mobility 2D-Si-MOSFETs as they approach the critical carrier density, nsc (approximately 0.72×1011 cm-2), which marks the metal insulator transition (MIT). In close proximity to the nsc, the conductivity exhibits a linear dependence on the temperature ().