The nitrogen concentration effect on Ce doped SiON emission: towards optimized Ce for LED applications.

Ce-Doped SiON films are deposited by magnetron reactive sputtering from a CeO target under a nitrogen reactive gas atmosphere. Visible photoluminescence measurements regarding the nitrogen gas flow reveal a large emission band centered at 450 nm for a sample deposited under a 2 sccm flow. Special attention is paid to the origin of such an emission at high nitrogen concentration.