Many metallurgical processes produce characteristic dislocation accumulation, with heterogeneous spatial and orientation distributions and further development of microstructures after heat treatment. Recovery and recrystallisation behaviours are direct consequences of those uneven dislocation distributions. The Electron BackScatter Diffraction (EBSD) technique can be used for the characterisation of such microstructural features, including: Density of Geometrically Necessary Dislocations (GND), Kernel Average Misorientations (KAM), Grain Orientation Spread (GOS), Grain Average Misorientation (GAM), Grain Reference Orientation Deviation (GROD - Angle) and GOS/D, where D is an assumed characteristic grain length.
View Article and Find Full Text PDFSilicon nanocrystals embedded in silicon nitride films were grown by direct plasma enhanced chemical vapor deposition at 300 degrees C, using mixtures of SiH2Cl2/NH3/H2/Ar. The films composition and chemical stability was tested by Fourier Transform Infrared Spectroscopy and Rutherford Backscattering Spectroscopy. The influence of hydrogen abundance during the deposition process on the photoluminescence of as-grown samples was studied as a function of the radiofrequency power and hydrogen dilution flow rate.
View Article and Find Full Text PDFCo(3)O(4) nanoparticles have been produced by mechanochemical reactions involving cobalt carbonate, sodium oxide and sodium carbonate. The mechanochemical reactions are carried out during milling at room temperature and the nanoparticles have been obtained without the need for any thermal treatment after the milling operation. The CoO phase is produced in the first 30 min of the mechanochemical process, followed by a second stage of oxidation to Co(3)O(4) which lasts for several hours.
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