Publisher Correction: Atomic-scale engineering of ferroelectric-ferromagnetic interfaces of epitaxial perovskite films for functional properties.

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Atomic-scale engineering of ferroelectric-ferromagnetic interfaces of epitaxial perovskite films for functional properties.

Besides epitaxial mismatch that can be accommodated by lattice distortions and/or octahedral rotations, ferroelectric-ferromagnetic interfaces are affected by symmetry mismatch and subsequent magnetic ordering. Here, we have investigated La Sr MnO (LSMO) samples with varying underlying unit cells (uc) of BaTiO (BTO) layer on (001) and (110) oriented substrates in order to elucidate the role of symmetry mismatch. Lattice mismatch for 3 uc of BTO and symmetry mismatch for 10 uc of BTO, both associated with local MnO octahedral distortions of the (001) LSMO within the first few uc, are revealed by scanning transmission electron microscopy.

Structural, magnetic and electrical properties of SrRuO3 films and SrRuO3/SrTiO3 superlattices.

SrRuO3 films and SrRuO3/SrTiO3 superlattices grown on SrTiO3(001) were studied by structural, magnetic, magnetoresistance and Hall effect measurements. The superlattices showed heteroepitaxial growth with coherent interfaces and a Ru/Ti diffusion region of 1-1.5 unit cells.

Large local Hall effect in pin-hole dominated multigraphene spin-valves.

We report local and non-local measurements in pin-hole dominated mesoscopic multigraphene spin-valves. Local spin-valve measurements show spurious switching behavior in resistance during magnetic field sweeping similar to the signal observed due to spin injection into multigraphene. The switching behavior has been explained in terms of a local Hall effect due to a thickness irregularity of the tunnel barrier.

Revealing the origin of the vertical hysteresis loop shifts in an exchange biased Co/YMnO3 bilayer.

We have investigated exchange bias effects in bilayers composed of the antiferromagnetic o-YMnO(3) and ferromagnetic Co thin film by means of SQUID magnetometry, magnetoresistance, anisotropic magnetoresistance and the planar Hall effect. The magnetization and magneto-transport properties show pronounced asymmetries in the field and magnetization axes of the field hysteresis loops. Both exchange bias parameters, the exchange bias field H(E)(T) as well as the magnetization shift M(E)(T), vanish around the Néel temperature T(N) =/~ 45 K.