Recent Progress on the Gold-Free Integration of Ternary III-As Antimonide Nanowires Directly on Silicon.

During the last few years, there has been renewed interest in the monolithic integration of gold-free, Ternary III-As Antimonide (III-As-Sb) compound semiconductor materials on complementary metal-oxide-semiconductor (CMOS)-compatible silicon substrate to exploit its scalability, and relative abundance in high-performance and cost-effective integrated circuits based on the well-established technology. Ternary III-As-Sb nanowires (NWs) hold enormous promise for the fabrication of high-performance optoelectronic nanodevices with tunable bandgap. However, the direct epitaxial growth of gold-free ternary III-As-Sb NWs on silicon is extremely challenging, due to the surfactant effect of Sb.