Publications by authors named "Evgeny S Gornev"
Article Synopsis
- Resistive switching (RS) device performance is influenced by the material properties of both the insulator and the bottom electrode (BE), particularly the surface roughness of the BE, which in this case is a Ru film on a TiN layer.
- The study demonstrates that increasing the thickness of the Ru films through radical-enhanced atomic layer deposition (REALD) leads to a significant rise in surface roughness and results in changes to various RS parameters such as switching voltage and resistance states.
- A simplified model links the roughness of the Ru surface to the RS characteristics by simulating field distribution and indicating that the roughness enhances local fields, leading to specific conducting filament formation, which was confirmed using conductive atomic force microscopy.